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Transistor type used in the flat-panel display industry
Low-temperature polycrystalline silicon (LTPS) is polycrystalline silicon that has been synthesized at relatively low temperatures (~650 °C and lower)
Low-temperature polycrystalline silicon
Low-temperature_polycrystalline_silicon
High purity form of silicon
Polycrystalline silicon, or multicrystalline silicon, also called polysilicon, poly-Si, or mc-Si, is a high-purity, polycrystalline form of silicon, used
Polycrystalline_silicon
Non-crystalline silicon
Amorphous silicon differs from other allotropic variations, such as monocrystalline silicon—a single crystal, and polycrystalline silicon, that consists
Amorphous_silicon
Semiconducting material used in solar cell technology
Crystalline silicon or (c-Si) is the crystalline forms of silicon, either polycrystalline silicon (poly-Si, consisting of small crystals), or monocrystalline
Crystalline_silicon
Form of silicon with a continuous, unbroken crystal lattice
Monocrystalline silicon differs from other allotropic forms, such as non-crystalline amorphous silicon—used in thin-film solar cells—and polycrystalline silicon, which
Monocrystalline_silicon
Chemical element with atomic number 14 (Si)
of large-area, low-cost, thin-film solar cells. Such semiconductor grades of silicon are either slightly less pure or polycrystalline rather than monocrystalline
Silicon
Diode that emits light from an organic compound
is necessary to drive the pixels correctly. As of 2019, low-temperature polycrystalline silicon (LTPS) – TFT is widely used for commercial AMOLED displays
OLED
Type of second-generation solar cell
solar cell. The silicon film is crystallized by an annealing step, temperatures of 400–600 Celsius, resulting in polycrystalline silicon. These new devices
Thin-film_solar_cell
Chemical compound
Banerjee, H. D.; Basu, S. (1982-09-01). "Low-temperature preparation of polycrystalline silicon from silicon tetrachloride". Materials Letters. 1 (2):
Silicon_tetrafluoride
Wide-bandgap semiconductor and abrasion-resistant ceramic
first demonstrated around 1907. Silicon carbide is used in semiconductor electronic devices that operate at high temperatures, high voltages or both. Naturally
Silicon_carbide
Solid-state electrically operated switch also used as an amplifier
1947) and silicon (first used in 1954)—in amorphous, polycrystalline and monocrystalline form. The compounds gallium arsenide (1966) and silicon carbide
Transistor
Method used to apply surface coatings
various forms, including: monocrystalline, polycrystalline, amorphous, and epitaxial. These materials include: silicon (dioxide, carbide, nitride, oxynitride)
Chemical_vapor_deposition
Chemical compound
to temperatures of about 1600 °C. Polycrystalline silicon oxynitride ceramics are primarily produced by nitridation of a mixture of Si and silicon dioxide
Silicon_oxynitride
Device used to produce electricity from light
monocrystalline silicon. Ribbon silicon is a type of polycrystalline silicon—it is formed by drawing flat thin films from molten silicon and results in
Solar_cell
Topics referred to by the same term
Wiktionary, the free dictionary. LTPS or LTPs may refer to: Low-temperature polycrystalline silicon, a transistor type used in the flat-panel display industry
LTPS
Fiber made from spun molten minerals
the classification temperature. Products made of polycrystalline wool can generally be used up to the classification temperature.[citation needed] There
Mineral_wool
amorphous phase. This is in contrast to polycrystalline silicon (poly-Si) which consists solely of crystalline silicon grains, separated by grain boundaries
Nanocrystalline_silicon
Field-effect transistor device
amorphous or polycrystalline silicon were (and still are) used as the semiconductor layer. However, because of the low mobility of amorphous silicon and the
Thin-film_transistor
Inorganic, nonmetallic solid prepared by the action of heat
properties such as high melting temperature, high hardness, poor conductivity, high moduli of elasticity, chemical resistance, and low ductility are the norm,
Ceramic
Electronic oscillator circuit
phosphate, bismuth germanium oxide, polycrystalline zirconium titanate ceramics, high-alumina ceramics, silicon-zinc oxide composite, or dipotassium
Crystal_oscillator
Research in the field of photovoltaics
silicon technology as a whole. The current industrial production of silicon is via the reaction between carbon (charcoal) and silica at a temperature
Solar_cell_research
Type of field-effect transistor
misnomer, because the gate material can be a layer of polysilicon (polycrystalline silicon). Similarly, "oxide" in the name can also be a misnomer, as different
MOSFET
Japanese display manufacturer
displays driven by TFTs based on a low-temperature polycrystalline-silicon ("LTPS") process instead of amorphous silicon, allowing higher resolutions of
Japan_Display
Semiconductor Fabrication Technique
amorphous silicon, the semiconductor industry almost universally adopted self-aligned gates made with polycrystalline silicon (poly-silicon), the so-called
Self-aligned_gate
Assembly of photovoltaic cells used to generate electricity
produced from crystalline silicon (c-Si) solar cells made of polycrystalline or monocrystalline silicon. In 2021, crystalline silicon accounted for 95% of
Solar_panel
Gem variety of the mineral corundum
Synthetic sapphire should be distinguished from transparent polycrystalline alumina. Polycrystalline alumina consists of many crystalline grains separated by
Sapphire
Solar-cell architecture
c-Si/SiOx/poly-Si (POLO; polycrystalline silicon on oxide). Hybrid inorganic–organic heterojunction solar cells have been produced using n-type silicon coated with
Heterojunction_solar_cell
Quantity in solid-state physics
room temperature (300 K) in metals like gold, copper and silver is 30–50 cm2/(V⋅s). Carrier mobility in semiconductors is doping dependent. In silicon (Si)
Electron_mobility
Direct conversion process from heat to electricity via photons
lower temperatures than solar cells, their efficiencies tend to be low. Offsetting this through the use of multi-junction cells based on non-silicon materials
Thermophotovoltaic energy conversion
Thermophotovoltaic_energy_conversion
Type of resistor whose resistance varies with temperature
crystal oscillators for temperature compensation, medical equipment temperature control, and industrial automation, silicon PTC thermistors display a
Thermistor
Solid material with highly ordered microscopic structure
solids are polycrystalline, including almost all metals, ceramics, ice, rocks, etc. Solids that are neither crystalline nor polycrystalline, such as glass
Crystal
Material with a continuous, unbroken crystal lattice
limited to short-range order only. In between the two extremes exist polycrystalline, which is made up of a number of smaller crystals known as crystallites
Single_crystal
Non-crystalline solid
investigated example is represented by the unoriented molecules of thin polycrystalline silicon films. Wedge-shaped polycrystals were identified by transmission
Amorphous_solid
American electrical engineer
former colleague Tsu-Jae King Liu and their students, a low-temperature polycrystalline silicon germanium micromachining technology was developed that
Roger_T._Howe
Research of materials
their stiffness and stability under high temperatures, compression and electrical stress. Alumina, silicon carbide, and tungsten carbide are made from
Materials_science
Alternative to silicon-based photovoltaics
et al. developed low-temperature processed perovskite cells using a SnO2 electron transport layer. This allowed the use of silicon heterojunction solar
Perovskite_solar_cell
pressure of carbon is negligible compared to the one of silicon, the Si atoms desorb at high temperatures and leave behind the carbon atoms which form graphitic
Epitaxial graphene growth on silicon carbide
Epitaxial_graphene_growth_on_silicon_carbide
Alloy with higher durability than normal metals
crystal in order to eliminate grain boundaries, trading in strength at low temperatures for increased resistance to thermal creep. The primary application
Superalloy
Chemical element with atomic number 12 (Mg)
MgO·CaO + 2 CO2 Reduction occurs at high temperatures with silicon. A ferrosilicon alloy is used rather than pure silicon as it is more economical. The iron
Magnesium
Hexagonal lattice made of carbon atoms
microwave assisted hydrothermal pyrolysis. Heating silicon carbide (SiC) to high temperatures (1100 °C) under low pressures (c. 10−6 torr, or 10−4 Pa) reduces
Graphene
State of matter
forms of solar energy cells. Thin film deposition of silicon quantum dots on the polycrystalline silicon substrate of a photovoltaic (solar) cell increases
Solid
Materials resistant to decomposition under high temperatures
crystalline, polycrystalline, amorphous, or composite. They are typically composed of oxides, carbides or nitrides of the following elements: silicon, aluminium
Refractory
Physical phenomenon
present in materials like germanium, polycrystalline silicon, amorphous silicon, silicon carbide, and single crystal silicon. Hence, semiconductor strain gauges
Piezoresistive_effect
Diamond created by controlled processes
produced in the laboratory. They remain functional at much higher temperatures than silicon devices, and are resistant to chemical and radiation damage. While
Synthetic_diamond
Measure of the electric polarizability of a dielectric, compared with that of a vacuum
The relative low frequency permittivity of ice is ~96 at −10.8 °C, falling to 3.15 at high frequency, which is independent of temperature. It remains in
Relative_permittivity
Ratio of energy extracted from sunlight in solar cells
T_{cell}} is the actual temperature of the solar cell. A high quality, monocrystalline silicon solar cell, at 25 °C cell temperature, may produce 0.60 V open-circuit
Solar-cell_efficiency
Use of mirror or lens assemblies to generate current from multi-junction solar cells
magnification). Low concentration PV are systems with a solar concentration of 2–100 suns. For economic reasons, conventional or modified silicon solar cells
Concentrator_photovoltaics
Iron alloy optimized for magnetic properties
Electrical steel (E-steel, lamination steel, silicon electrical steel, silicon steel, relay steel, transformer steel) is speciality steel used in the
Electrical_steel
Science and technology of creating objects from inorganic, non-metallic materials
Friction, Lubrication and Temperature Rise Characteristics of Silicon Nitride Full Ceramic Ball Bearing at Low Temperature". Industrial Lubrication and
Ceramic_engineering
Composite material consisting of ceramic fibers in a ceramic matrix
reaction of silicon with a porous preform of C/C. The process temperature is above 1,414 °C (2,577 °F), that is above the melting point of silicon, and the
Ceramic_matrix_composite
Method for producing solid materials from small molecules
is used for the fabrication of metal oxides, especially the oxides of silicon (Si) and titanium (Ti). The process involves conversion of monomers or
Sol–gel_process
Very small devices that incorporate moving components
HAR silicon micromachining the thickness can be from 10 to 100 μm. The materials commonly used in HAR silicon micromachining are thick polycrystalline silicon
MEMS
Method to produce electricity from solar radiation
lower temperatures than solar cells, their efficiencies tend to be low. Offsetting this through the use of multi-junction cells based on non-silicon materials
Photovoltaics
Semiconducting material
use in organic light-emitting diode (OLED) TV displays. While polycrystalline silicon can also exhibit high electron mobilities, its performance is often
Indium_gallium_zinc_oxide
Form of carbon
the lithosphere have a more irregular, almost polycrystalline texture, reflecting the higher temperatures and pressures as well as the transport of the
Diamond
Type of field-effect transistor
pentacene oxidation technique is akin to the silicon oxidation used in the silicon electronics. Polycrystalline tetrathiafulvalene and its analogues result
Organic field-effect transistor
Organic_field-effect_transistor
Mathematical model of semiconductor oxidation
rate-enhancement terms. The Deal-Grove model also fails for polycrystalline silicon ("poly-silicon"). First, the random orientation of the crystal grains makes
Deal–Grove_model
Chemical compound
thin film without applying high external pressure. Polycrystalline YbO films have been grown on silicon by molecular beam deposition. Control of the ytterbium
Ytterbium(II)_oxide
Cutting tool with diamond grains
brittleness, etc. Polycrystalline Diamond (PCD): They are normally made by sintering many micro-size single diamond crystals at high temperature and high pressure
Diamond_tool
Chemical compounds containing the element lanthanum
high-pressure silicides contain extended silicon frameworks and exhibit superconductivity at low temperature. Lanthanum forms the complete series of equiatomic
Lanthanum_compounds
Chemical compound
semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure polycrystalline material has the appearance of pale orange or grayish pieces
Gallium_phosphide
Chemical compound
refractive behaviour depends on polarisation and propagation direction. In polycrystalline alumina, pores and differently oriented birefringent grains scatter
Aluminium_oxide
nitride). In this method, the environment around a single crystal or a polycrystalline plate is filled with vapor heated to between 1600°C and 2100°C. Changes
Sublimation_sandwich_method
German scientist and professor
(AIC) of amorphous silicon for the production of large-grained polycrystalline silicon films on glass at relatively low temperatures. His research group
Armin_Aberle
Type of power rectifier
superseded by silicon diode rectifiers in the late 1960s. The arrival of the alternator in some automobiles was the result of compact, low-cost, high-current
Selenium_rectifier
Aerofoil; individual component of a turbine disc
force, even at moderate temperatures. Conversely, low temperatures correspond to a compressive state characterized by low-temperature plasticity, typically
Turbine_blade
Chemical element with atomic number 74 (W)
uranium and gold, and much higher (about 1.7 times) than that of lead. Polycrystalline tungsten is an intrinsically brittle and hard material (under standard
Tungsten
Converts output of a photovoltaic panel into a utility frequency alternating current
Solar cells have a complex relationship between solar irradiation, temperature and total resistance that produces a non-linear output efficiency known
Solar_inverter
Timing oscillator
and associated fabrication techniques. In particular, single and polycrystalline silicon was found to be suitable for frequency references with effectively
Microelectromechanical system oscillator
Microelectromechanical_system_oscillator
Type of solar power cell
technology to be extensively developed was amorphous silicon. However, this technology suffers from low efficiencies and slow deposition rates (leading to
Cadmium telluride photovoltaics
Cadmium_telluride_photovoltaics
Chemical compound
lead telluride and silicon-germanium have been used, these materials suffer from high thermal conductivity. At room temperature, the crystal structure
Tin_selenide
Chemical element with atomic number 6 (C)
Shizue; Inoue, Toru; Sumiya, Hitoshi (2003). "Materials: Ultrahard polycrystalline diamond from graphite". Nature. 421 (6923): 599–600. Bibcode:2003Natur
Carbon
Interface between crystallites in a polycrystalline material
differently oriented grains, or crystallites, of the same phase in a polycrystalline material. Grain boundaries are two-dimensional defects in the crystal
Grain_boundary
Computer memory technology
for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon", is
SONOS
to low power devices at room temperature; its direct band gap gives it more favorable optoelectronic properties than the indirect band gap of silicon; it
List of semiconductor materials
List_of_semiconductor_materials
Electrical device
amorphous silicon between two metal conductors. When a sufficiently high voltage is applied across the amorphous silicon it is turned into a polycrystalline silicon-metal
Antifuse
Type of transistor
channel. Among the more unusual body materials are amorphous silicon, polycrystalline silicon or other amorphous semiconductors in thin-film transistors
Field-effect_transistor
Concept of collecting solar power in outer space and distributing it to Earth
proposed radiators are thin wall plastic tube filled with low pressure (2.4 kPa) and temperature (20 deg C) steam. Solar pumped laser: Japan has pursued
Space-based_solar_power
Mechanical property that measures stiffness of a solid material
(November 1988). "Characterization of some mechanical properties of polycrystalline yttrium iron garnet (YIG) by non-destructive methods". Journal of Materials
Young's_modulus
Materials whose temperature variance leads to voltage change
characterization of Na xSi 136 (0 < x ≤ 24) single crystals and low-temperature transport of polycrystalline specimens". Inorganic Chemistry. 51 (16): 8686–8692.
Thermoelectric_materials
Chemical compound
applications in spintronics as a material for spin injectors. Thin polycrystalline films of indium oxide doped with Zn2+ are highly conductive (conductivity
Indium(III)_oxide
Conversion of energy from sunlight into electricity
solar energy, such as in high-temperature molten salts. These salts are an effective storage medium because they are low-cost, have a high specific heat
Solar_power
Silica mineral, rare polymorph of quartz
form (polymorph) of silicon dioxide (SiO2) that is formed when very high pressure (2–3 gigapascals), and moderately high temperature (700 °C, 1,300 °F)
Coesite
Type of thin-film photovoltaic cell
160–190 μm is required for crystalline silicon.[citation needed] The active CIGS-layer can be deposited in a polycrystalline form directly onto molybdenum (Mo)
Copper indium gallium selenide solar cell
Copper_indium_gallium_selenide_solar_cell
Transparent non-crystalline solid material
polycrystalline materials. Semi-opacity due to crystallization may be induced in many glasses by maintaining them for a long period at a temperature just
Glass
Study of solid materials' properties and composition
processing in the 1950s, high-purity silicon as a core component of microelectronic devices in the 1960s, and "high temperature" superconductivity in the 1980s
Solid-state_chemistry
Material which glows when excited by ionizing radiation
semiconductors, the delocalized electrons provided by the silicon are not "frozen out" at cryogenic temperatures. Above the Mott transition concentration of 8×1015
Scintillator
diamond, which would have superior characteristics to silicon-based technology in high-temperature, high-frequency or high-electron mobility applications
Material properties of diamond
Material_properties_of_diamond
Chemical compound
from the samples, as oxidation occurring at the impurities leads to polycrystalline growth. Pure bismuth is a semimetal, containing a small band gap, which
Bismuth_antimonide
Method of coating solid surfaces with thin films
A.A., Egorova I.L. (2015). "Properties and optical application of polycrystalline zinc selenide obtained by physical vapor deposition". Scientific and
Physical_vapor_deposition
Solid metallic material with disordered atomic-scale structure
of temperatures and correlated to their absolute resistivity values was identified by Mooij in 1973, becoming Mooijs-rule. Alloys of boron, silicon, phosphorus
Amorphous_metal
Chemical element with metallic and nonmetallic properties
metalloid" such as boron, carbon, silicon, phosphorus or germanium. Aside from thin films deposited at very low temperatures, the first known metallic glass
Metalloid
Wafer bond with glass central layer
adapted to silicon. This results in low stress in the bonded wafer pair. The glass has to flow and wet the soldered surfaces well below the temperature where
Glass_frit_bonding
Crystal growth process relative to the substrate used as seed
source gases. Growth rates above 2 micrometres per minute produce polycrystalline silicon, and negative growth rates (etching) may occur if too much hydrogen
Epitaxy
Aircraft powered directly by electricity, with no other engine needed
initially funded by the Swedish innovation agency Vinnova and is an alumnus of Silicon Valley start-up accelerator Y Combinator. In March 2021, Toulouse-based
Electric_aircraft
Refractory compound of boron and nitrogen with formula BN
iron, nickel, and related alloys at high temperatures, whereas diamond is soluble in these metals. Polycrystalline c-BN (PCBN) abrasives are therefore used
Boron_nitride
Solar energy technology
low temperature source for heat pumps, for example. Thus, PVT collectors make better use of the solar spectrum. Most photovoltaic cells (e.g. silicon
Photovoltaic thermal hybrid solar collector
Photovoltaic_thermal_hybrid_solar_collector
Flexible form of cast iron
properties in low temperature environments than other nodular irons, due to its lower silicon content. The ductile to brittle transition temperature is lower
Malleable_iron
Chemical compounds with at least one niobium atom
known. Polycrystalline NbP can be prepared by direct reaction of elemental niobium and red phosphorus in an evacuated tube at elevated temperature. Single
Niobium_compounds
Electronic device manufacturing process
due to the high cost per unit area of traditional bulk (mono- or polycrystalline) silicon manufacturing. Other applications could arise which take advantage
Roll-to-roll_processing
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