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Type of transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two
Field-effect_transistor
Type of field-effect transistor
A ChemFET is a chemically-sensitive field-effect transistor, that is a field-effect transistor used as a sensor for measuring chemical concentrations in
Chemical field-effect transistor
Chemical_field-effect_transistor
Type of field-effect transistor
metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated
MOSFET
Type of non-planar transistor
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where
Fin_field-effect_transistor
Type of field-effect transistor
An organic field-effect transistor (OFET) is a field-effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by
Organic field-effect transistor
Organic_field-effect_transistor
Field-effect transistor made from carbon nanotubes
A carbon nanotube field-effect transistor (CNTFET) is a field-effect transistor that utilizes a single carbon nanotube (CNT) or an array of carbon nanotubes
Carbon nanotube field-effect transistor
Carbon_nanotube_field-effect_transistor
Solid-state electrically operated switch also used as an amplifier
type of transistor, the metal–oxide–semiconductor field-effect transistor (MOSFET), was invented at Bell Labs between 1955 and 1960. Transistors revolutionized
Transistor
Experimental transistor
field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor field-effect
Tunnel field-effect transistor
Tunnel_field-effect_transistor
A DNA field-effect transistor (DNAFET) is a field-effect transistor which uses the field-effect due to the partial charges of DNA molecules to function
DNA_field-effect_transistor
MOS field-effect transistor with more than one gate
multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than
Multigate_device
Electronic component that exploits the electronic properties of semiconductor materials
Three-terminal devices: Bipolar transistor Darlington transistor Field-effect transistor Insulated-gate bipolar transistor (IGBT) Silicon-controlled rectifier
Semiconductor_device
Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). The principle of a field-effect
History_of_the_transistor
Devices that measure magnetic field strength using the Hall effect
power-consuming for everyday Hall effect sensor applications, which were limited to laboratory instruments. Even early generation transistor technology was unsuited;
Hall_effect_sensor
Transistor that uses both electrons and holes as charge carriers
unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected
Bipolar_junction_transistor
Diode that emits light from an organic compound
sequentially, one by one Active-matrix (AMOLED) that uses a thin-film transistor (TFT) backplane to directly access and switch each individual pixel on
OLED
Type of field-effect transistor
A ferroelectric field-effect transistor (Fe FET) is a type of field-effect transistor that includes a ferroelectric material sandwiched between the gate
Fe_FET
Converts light into current
phototransistor, the field-effect phototransistor (also known as photoFET), is a light-sensitive field-effect transistor. Unlike photobipolar transistors, photoFETs
Photodiode
Discrete device in an electronic system
(multi-gate field-effect transistor) FinFET (fin field-effect transistor) TFT (thin-film transistor) FeFET (ferroelectric field-effect transistor) CNTFET (carbon
Electronic_component
Technology for constructing integrated circuits
(CMOS /ˈsiːmɒs/ SEE-moss) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical
CMOS
Semiconductor manufacturing process
next significant milestone in MOSFET (metal–oxide–semiconductor field-effect transistor) scaling, succeeding the "2 nm" process node. It continues the
1_nm_process
Form of transistor that emits light
elements such as TFTs. Organic field-effect transistor (OFET) Feng, M.; Holonyak, N.; Hafez, W. (2004). "Light-emitting transistor: Light emission from InGaP/GaAs
Light-emitting_transistor
Semiconductor light source
integrated 8-bit microcontroller for such functionally. Sometimes a flickering effect might happen due to an electric malfunction. Bi-color Bi-color LEDs contain
Light-emitting_diode
German electrical engineer and inventor
1934 Robert G. Arns, "The other transistor: early history of the metal–oxide–semiconductor field-effect transistor," Engineering Science and Education
Oskar_Heil
Pictogram used to represent various electrical and electronic devices or functions
junction gate field-effect transistor (JFET) P-channel junction gate field-effect transistor (JFET) Metal–oxide–semiconductor field-effect transistor (MOSFET)
Electronic_symbol
Electronic device/component that increases the strength of a signal
bipolar junction transistor (BJT) in 1948. They were followed by the invention of the metal–oxide–semiconductor field-effect transistor (MOSFET) by Mohamed
Amplifier
Modulation-doped transistors can reach high electrical mobilities and therefore fast operation. A modulation-doped field-effect transistor is known as a
Modulation_doping
Type of solid state switch
field-effect transistor (MOSFET) was later invented at Bell Labs between 1959 and 1960. The basic IGBT mode of operation, where a pnp transistor is
Insulated-gate bipolar transistor
Insulated-gate_bipolar_transistor
Type of field-effect transistor
The junction field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that
JFET
Electronic component
reliable low-voltage support capacitor to complement their newly invented transistor. With the development of plastic materials by organic chemists during
Capacitor
Semiconductor manufacturing process
die shrink after the "5 nm" MOSFET (metal–oxide–semiconductor field-effect transistor) technology node. South Korean chipmaker Samsung started shipping
3_nm_process
Central computer component that executes instructions
in large quantities. This standardization began in the era of discrete transistor mainframes and minicomputers, and has rapidly accelerated with the popularization
Central_processing_unit
Two-terminal electronic component
common transistors and diodes?". EDAboard.com. 2010-06-10. Archived from the original on October 11, 2007. Retrieved 2010-08-06. I.D.E.A. "Transistor Museum
Diode
Field of materials science
organic field-effect transistor (OFET) is a field-effect transistor utilizing organic molecules or polymers as the active semiconducting layer. A field-effect
Organic_electronics
System designed to maintain a constant voltage
used with the base of the regulating transistor connected directly to the voltage reference: A simple transistor regulator will provide a relatively constant
Voltage_regulator
Transistor with four active terminals
from which it is insulated by a silica layer. Field-effect tetrode Multigate transistor Pentode transistor US2666150A, Blakely, Robert T., "Crystal tetrode"
Tetrode_transistor
Field-effect transistor device
A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is made by thin-film deposition. TFTs are grown on
Thin-film_transistor
Array of logic gates that are reprogrammable
cores exist alongside the programmable fabric, but they are built out of transistors instead of LUTs so they have ASIC-level performance and power consumption
Field-programmable_gate_array
Multi-transistor electronics configuration
bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified
Darlington_transistor
Integrated circuit customized for a specific task
introduced the Micromatrix family of bipolar diode–transistor logic (DTL) and transistor–transistor logic (TTL) arrays. Complementary metal–oxide–semiconductor
Application-specific integrated circuit
Application-specific_integrated_circuit
Semiconductor manufacturing process
manufacturing, the 2 nm process is the MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node. The term "2 nanometer"
2_nm_process
Diode that allows current to flow in the reverse direction at a specific voltage
silicon transistor at around −2 mV/°C, so in a simple regulating circuit where the 4.7 V diode sets the voltage at the base of an NPN transistor (i.e. their
Zener_diode
Property of a field-effect transistor
threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed
Threshold_voltage
Converter that measures a physical quantity and converts it into a signal
include the open-gate field-effect transistor (OGFET) introduced by Johannessen in 1970, the ion-sensitive field-effect transistor (ISFET) invented by Piet
Sensor
Applied electric field conductivity change
surface, and is called the field effect. The field effect underlies the operation of the Schottky diode and of field-effect transistors, notably the MOSFET,
Field_effect_(semiconductor)
Solid-state semiconductor device
current makes an equivalent NPN transistor switch on, which in turn draws current from the base of an equivalent PNP transistor, turning it on also. Part of
TRIAC
MOSFET that can handle significant power levels
A power MOSFET is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other
Power_MOSFET
Micro-electronic component
system. Because of high transistor counts on modern devices, oftentimes a layout of sufficient throughput and high transistor density is physically realizable
System_on_a_chip
Electronic circuit formed on a small, flat piece of semiconductor material
integrated circuits (ICs) are based on the metal–oxide–semiconductor field-effect transistor (MOSFET), forming MOS ICs. The MOSFET was developed at Bell Labs
Integrated_circuit
Type of field-effect transistor
high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating
High-electron-mobility transistor
High-electron-mobility_transistor
Part of computer memory
(MOS) memory cells. Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops, along with MOS capacitors for certain
Memory_cell_(computing)
Electronic circuits that utilize digital signals
predeposition, were able to manufacture silicon dioxide field effect transistors; the first planar transistors, in which drain and source were adjacent at the
Digital_electronics
Vacuum tube used to display images
electromechanical meter, which later came to be used on higher-end tuners when transistor sets lacked the high voltage required to drive the device. The same type
Cathode_ray_tube
Semiconductor diode
resistance of the epitaxial layer is more important than it is for a transistor, as the current must cross its entire thickness. However, it serves as
Schottky_diode
Device that controls current between electrodes
tube, although usually using much lower voltages, is the junction field-effect transistor (JFET). Vacuum tubes are commonly described using characteristic
Vacuum_tube
Type of field-effect transistor
A field-effect transistor-based biosensor, also known as a biosensor field-effect transistor (Bio-FET or BioFET), field-effect biosensor (FEB), or biosensor
Bio-FET
Passive electronic component providing electrical resistance
otherwise disconnected (such as when a button is not pushed down or a transistor is not active). A pull-up resistor connects the circuit to a high positive
Resistor
Electrical device that converts AC to DC
in conjunction with at least one voltage amplifying component like a transistor to maintain output voltage when source voltage drops. The input filter
Rectifier
demonstrate a ballistic conduction behavior. Currently, the silicon MOS field-effect transistor (MOSFET) is the main and leading circuit. However, researchers
Ballistic deflection transistor
Ballistic_deflection_transistor
point-contact transistor. A point-contact transistor having three emitters. It became obsolete in the middle 1950s. Pentode field-effect transistors having 3
Pentode_transistor
Nonlinear two-terminal fundamental circuit element
organic/nanoparticle device (the NOMFET : Nanoparticle Organic Memory Field Effect Transistor), which behaves as a memristor and which exhibits the main behavior
Memristor
Type of resistor whose resistance varies with temperature
in electronic circuits. Many electronic devices, for example bipolar transistors, draw more power as they get hotter. Commonly, such circuits contain
Thermistor
Scientific misconduct scandal
PMID 12416506) J. H. Schön; Ch. Kloc; B. Batlogg (2000). "A Light-Emitting Field-Effect Transistor". Science. 290 (5493): 963–6. Bibcode:2000Sci...290..963S. doi:10
Schön_scandal
Passive two-terminal electrical component that stores energy in its magnetic field
passive two-terminal electrical component that stores energy in a magnetic field when an electric current flows through it. An inductor typically consists
Inductor
tool. It is used to study the charge carrier behavior of organic field-effect transistors. It measures the charge introduced optical transmission variation
Charge modulation spectroscopy
Charge_modulation_spectroscopy
Device for generating microwaves
Accessed 2009-08-23. White, Steve. "Electric Valves: Diodes, Triodes, and Transistors". zipcon.net. Archived from the original on 25 August 2017. Retrieved
Cavity_magnetron
Type of field-effect transistor
An ion-sensitive field-effect transistor (ISFET) is a field-effect transistor used for measuring ion concentrations in solution; when the ion concentration
ISFET
DC linear voltage regulator
{R_{1}}{R_{2}}}\right)V_{\text{ref}}\ .} If a bipolar transistor is used, as opposed to a field-effect transistor or JFET, significant additional power may be
Low-dropout_regulator
DC-DC voltage step-down power converter
semiconductors (a diode and a transistor, although modern buck converters frequently replace the diode with a second transistor used for synchronous rectification)
Buck_converter
Type of MOSFET where the gate is electrically isolated
as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate
Floating-gate_MOSFET
Solar cell that can produce electrical energy from each side of the cell
the one of 1976, that due to its npn structure similar to that of a transistor, was dubbed the "transcell". Eguren's thesis dealt with the demonstration
Bifacial_solar_cells
Electrical component that can break an electrical circuit
electric current instead of a clean transition from zero to full current. The effect is usually negligible in low-current signal circuits, but becomes critical
Switch
Practical physics application
decrease in luminous efficacy of LEDs as the electric current increases. This effect was initially thought related to elevated temperatures. Scientists proved
Light-emitting_diode_physics
Type of field-effect transistor
A MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor)
MESFET
First successful type of transistor, developed in 1947
The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and
Point-contact_transistor
Type of display device
dot). The physical reason for QD coloration is the quantum confinement effect and is directly related to their energy levels. The bandgap energy that
Quantum_dot_display
tetrode field-effect transistor or field-effect tetrode is a solid-state semiconductor device, constructed by creating two independently contacted field-effect
Field-effect_tetrode
Temperature control system
tenants' employees an illusion of control. These dummy thermostats are in effect a type of placebo button. However, these thermostats are often used to detect
Thermostat
Potential transistor-like device
sensitive transistor, also known as the spin transistor, spin field-effect transistor (spinFET), Datta–Das spin transistor or spintronic transistor (named
Spin_transistor
Electronic oscillator circuit
disastrous for systems employing PLL or FSK technologies. Magnetic fields have little effect on the crystal itself, as quartz is diamagnetic; eddy currents
Crystal_oscillator
Microchip manipulating light instead of electricity
sources and Silicon PICs enable co-integration of the photonics with transistor based electronics. The fabrication techniques are similar to those used
Photonic_integrated_circuit
Type of MOSFET
field-effect transistor (QFET) or quantum-well field-effect transistor (QWFET) is a type of MOSFET (metal–oxide–semiconductor field-effect transistor)
QFET
The inverted-T field-effect transistor (ITFET) is a type of field effect transistor invented by Leo Mathew at Freescale Semiconductor. Part of the device
ITFET
Type of solid-state switch
a combination of Greek language θύρα, meaning "door" or "valve", and transistor) is a solid-state semiconductor device which can be thought of as being
Thyristor
Type of voltage regulator
output transistor. The shunt regulator works by providing a path from the supply voltage to ground through a variable resistance (the main transistor is in
Linear_regulator
Type of resistor, usually with three terminals
variable resistor in series with the load could have a negligible effect or an excessive effect, depending on the load. Ageing may cause intermittent contact
Potentiometer
Type of bipolar junction transistor
The germanium alloy-junction transistor, or alloy transistor, was an early type of bipolar junction transistor, developed at General Electric and RCA
Alloy-junction_transistor
20th-century electrical engineer and physicist (1882–1963)
and physicist who has been credited with the first patent on the field-effect transistor in 1925. He was never able to build a working practical semiconductor
Julius_Edgar_Lilienfeld
Device for producing coherent EM waves in the sub-visible spectrum
Maiman created the first working model in 1960. For their research in the field of stimulated emission, Townes, Basov and Prokhorov were awarded the Nobel
Maser
Type of junction-gate field effect transistor
The static induction transistor (SIT) is a type of field-effect transistor (FET) capable of high-speed and high-power operation, with low distortion and
Static_induction_transistor
Electronic numeric display device
equivalent, the K155ID1, is still in production. However, modern bipolar transistors with high voltage ratings are now available cheaply, such as MPSA92 or
Nixie_tube
Type of transistor
A diffused junction transistor is a transistor formed by diffusing dopants into a semiconductor substrate. The diffusion process was developed later than
Diffused_junction_transistor
Material consisting of two layers of graphene
reasonable performance for a field effect transistor, but is very suited to the operation of tunnel field effect transistors, which according to theory
Bilayer_graphene
Type of field-effect transistor
An EOSFET or electrolyte–oxide–semiconductor field-effect transistor is a FET, like a MOSFET, but with an electrolyte solution replacing the metal for
EOSFET
Form of digital logic family in integrated circuits
(metal–oxide–semiconductor field-effect transistors) to implement logic gates and other digital circuits. NMOS transistors operate by creating an inversion
NMOS_logic
Chemical semiconductor compound
development of nitride-based devices such as UV detectors and high-speed field-effect transistors.[citation needed] High-brightness GaN light-emitting diodes (LEDs)
Gallium_nitride
Transistor using different semiconductor materials
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and
Heterojunction bipolar transistor
Heterojunction_bipolar_transistor
Quantum mechanical phenomenon
level becomes noticeable. A European research project demonstrated field effect transistors in which the gate (channel) is controlled via quantum tunnelling
Quantum_tunnelling
Location identifier for a circuit component
FET: Field-effect transistor GDT, SVP: Gas discharge tube, surge voltage protector H: Pin header J, JW: Wire link ("jumper") JFET: Junction gate field-effect
Reference_designator
Portable radio receiver
invention of the transistor in 1947—a semiconductor device that amplifies and acts as an electronic switch, which revolutionized the field of consumer electronics
Transistor_radio
Part of a Geiger counter
and the effect of different radiation energies are equal. However, the plateau has a slight slope mainly due to the lower electric fields at the ends
Geiger–Müller_tube
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