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Type of field-effect transistor
In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor
MOSFET
MOSFET that can handle significant power levels
A power MOSFET is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other
Power_MOSFET
Solid-state electrically operated switch also used as an amplifier
type of transistor, the metal–oxide–semiconductor field-effect transistor (MOSFET), was invented at Bell Labs between 1955 and 1960. Transistors revolutionized
Transistor
Mathematical model
The EKV Mosfet model is a mathematical model of metal-oxide semiconductor field-effect transistors (MOSFET) which is intended for circuit simulation and
EKV_MOSFET_model
Type of transistor
comes in two types: junction FET (JFET) and metal–oxide–semiconductor FET (MOSFET). FETs have three terminals: source, gate, and drain. FETs control the current
Field-effect_transistor
the early 1950s and led to the first widespread use of transistors. The MOSFET was invented at Bell Labs between 1955 and 1960, after Frosch and Derick
History_of_the_transistor
Type of solid state switch
after the power MOSFET.[citation needed] An IGBT cell is constructed similarly to an n-channel vertical-construction power MOSFET, except the n+ drain
Insulated-gate bipolar transistor
Insulated-gate_bipolar_transistor
Circuit in transistors
MOSFET gate driver is a specialized circuit that is used to drive the gate (gate driver) of power MOSFETs effectively and efficiently in high-speed switching
MOSFET_gate_driver
DC-DC voltage step-down power converter
minimized by selecting MOSFETs with low gate charge, by driving the MOSFET gate to a lower voltage (at the cost of increased MOSFET conduction losses), or
Buck_converter
The MOSFET (metal–oxide–semiconductor field-effect transistor) is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled
List_of_MOSFET_applications
Type of MOSFET where the gate is electrically isolated
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect
Floating-gate_MOSFET
Family of digital circuits
enhancement mode metal–oxide–semiconductor field-effect transistors (MOSFETs). In the late 1960s and early 1970s, PMOS logic was the dominant semiconductor
PMOS_logic
Audio amplifier based on switching
electronic amplifier in which the amplifying devices (transistors, usually MOSFETs) operate as electronic switches, and not as linear gain devices as in other
Class-D_amplifier
Technology for constructing integrated circuits
field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS
CMOS
Two-stage amplifier in an electronic circuit
for the MOSFET version, also replacing the MOSFET by its hybrid-π model equivalent. This derivation can be simplified by noting that the MOSFET gate current
Cascode
Technology in semiconductor manufacturing
low cost alternative to FinFETs. An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such
Silicon_on_insulator
CMOS-based electronic switch
a CMOS-based switch using a p-channel MOSFET (PMOS) that passes a strong 1 but a poor 0, and a n-channel MOSFET (NMOS) that passes a strong 0 but a poor
Transmission_gate
MOS field-effect transistor with more than one gate
multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more
Multigate_device
Technical specification
For power semiconductor devices (such as BJT, MOSFET, thyristor or IGBT), the safe operating area (SOA) is defined as the voltage and current conditions
Safe_operating_area
Branch of physics and electrical engineering
basis, which limited them to a number of specialised applications. The MOSFET was invented at Bell Labs between 1955 and 1960. It was the first truly
Electronics
Power amplifier
input for the gate of a high-power transistor such as an IGBT or power MOSFET. Gate drivers can be provided either on-chip or as a discrete module. In
Gate_driver
Converter that measures a physical quantity and converts it into a signal
One example of this is the event camera. The MOSFET invented at Bell Labs between 1955 and 1960, MOSFET sensors (MOS sensors) were later developed, and
Sensor
Electronic switching device
SSR based on a single MOSFET, or multiple MOSFETs in a paralleled array, can work well for direct current (DC) loads. MOSFETs have an inherent substrate
Solid-state_relay
Technique in electrical devices
rectification by replacing diodes with actively controlled switches, usually power MOSFETs or power bipolar junction transistors (BJT). Whereas normal semiconductor
Active_rectification
Semiconductor device capable of handling large amounts of electricity
of the power MOSFET. Some common power devices are the power MOSFET, power diode, thyristor, and IGBT. The power diode and power MOSFET operate on similar
Power_semiconductor_device
Circuit designed to copy a current through one active device
MOSFET mirrors because MOSFETs have rather low intrinsic output resistance values. A MOSFET version of Figure 3 is shown in Figure 4, where MOSFETs M3
Current_mirror
Device measuring ionizing radiation exposure
for radiotherapy radiation beams. The main advantages of MOSFET devices are: 1. The MOSFET dosimeter is direct reading with a very thin active area (less
Dosimeter
applications. MOSFET dosimeters are now used as clinical dosimeters for radiotherapy radiation beams. The main advantages of MOSFET devices are: 1. The MOSFET dosimeter
Electronic_personal_dosimeter
Programmable machine that processes data
(1930s), thermionic valves (1930s), semiconductor transistors (1940s), MOSFET (MOS transistors 1950s), and finally monolithic integrated circuits (1950s+)
Computer
Korean-born American engineer and inventor (1931–1992)
his work in solid-state electronics. He is best known for inventing the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor),
Dawon_Kahng
examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes. RCA's CD4000
List of semiconductor scale examples
List_of_semiconductor_scale_examples
Polarity-switching electronic circuit
P-channel MOSFETs connected to the high voltage bus and NPN BJTs or N-channel MOSFETs connected to the low voltage bus. The most efficient MOSFET designs
H-bridge
Type of electronic oscillator
devices—typically metal-oxide-semiconductor field-effect transistors (MOSFETs) or bipolar junction transistors (BJTs)—and a resonant LC filter, commonly
Cross-coupled_LC_oscillator
Observation on the growth of integrated circuit capacity
working in the field. In 1974, Robert H. Dennard at IBM recognized the rapid MOSFET scaling technology and formulated what became known as Dennard scaling,
Moore's_law
Topics referred to by the same term
(formerly known as Polycystic ovary syndrome or PCOS) PMOS logic p-channel MOSFET (pMOS) postmarketOS (pmOS), a Linux operating system distro Prime Minister's
PMOS
native transistor. Historically, native transistors were referred to as MOSFETs without specially grown oxide, only natural thin oxide film formed over
Native_transistor
Property of a field-effect transistor
application of a negative gate voltage to the p-type "enhancement-mode" MOSFET enhances the channels conductivity turning it “ON”. In contrast, n-channel
Threshold_voltage
Electronic component that exploits the electronic properties of semiconductor materials
metal–oxide–semiconductor field-effect transistor (MOSFET). The metal-oxide-semiconductor FET (MOSFET, or MOS transistor), a solid-state device, is by far
Semiconductor_device
Branch of engineering
in 1968. Since then, the MOSFET has been the basic building block of modern electronics. The mass-production of silicon MOSFETs and MOS integrated circuit
Electrical_engineering
Startup technique in electronics
usually to increase rather than decrease the impedance. In the domain of MOSFET circuits, bootstrapping is commonly used to mean pulling up the operating
Bootstrapping_(electronics)
Semiconductor manufacturing process
manufacturing, the "1 nm process" represents the next significant milestone in MOSFET (metal–oxide–semiconductor field-effect transistor) scaling, succeeding
1_nm_process
Electronic circuits that utilize digital signals
integration (LSI), these factors make the MOSFET an important switching device for digital circuits. The MOSFET revolutionized the electronics industry
Digital_electronics
Type of MOSFET
transistor (QFET) or quantum-well field-effect transistor (QWFET) is a type of MOSFET (metal–oxide–semiconductor field-effect transistor) that takes advantage
QFET
Device that converts images into electronic signals
technology, with CCDs based on MOS capacitors and CMOS sensors based on MOSFET (MOS field-effect transistor) amplifiers. Analog sensors for invisible radiation
Image_sensor
Multidisciplinary field of engineering
drain and source were adjacent at the same surface. MOSFET scaling, the miniaturisation of MOSFETs on IC chips, led to the miniaturisation of electronics
Electromechanics
Semiconductor manufacturing process
manufacturing, the "3 nm process" is the next die shrink after the "5 nm" MOSFET (metal–oxide–semiconductor field-effect transistor) technology node. South
3_nm_process
Electrical circuit power converter
switching MOSFET another MOSFET biased into its linear region. This second MOSFET has a lower drain-source voltage than the switching MOSFET would have on its
Voltage_multiplier
Feature of a MOSFET's current–voltage characteristic
The subthreshold slope is a feature of a MOSFET's current–voltage characteristic. In the subthreshold region, the drain current behaviour—though being
Subthreshold_slope
Experimental transistor
is very similar to a metal–oxide–semiconductor field-effect transistor (MOSFET), the fundamental switching mechanism differs, making this device a promising
Tunnel field-effect transistor
Tunnel_field-effect_transistor
Technology of power electronics
devices such as diodes, thyristors, and power transistors such as the power MOSFET and IGBT. In contrast to electronic systems concerned with the transmission
Power_electronics
Egyptian engineer (1924–2009)
is best known for inventing, along with his colleague Dawon Kahng, the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) in
Mohamed_M._Atalla
Semiconductor company in the Netherlands
range includes bipolar transistors, diodes, ESD protection, TVS diodes, MOSFETs, and logic devices. Nexperia is a second-generation spin-off of Philips'
Nexperia
As transistors become smaller, their power density remains constant
In semiconductor electronics, Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their
Dennard_scaling
American semiconductor manufacturer
Asia, Europe, and the Americas where it produces rectifiers, diodes, MOSFETs, optoelectronics, selected integrated circuits, resistors, capacitors,
Vishay_Intertechnology
Micro-electronic component
(FinFET) Floating-gate MOSFET (FGMOS) Insulated-gate bipolar transistor (IGBT) ISFET LDMOS MOS field-effect transistor (MOSFET) Multi-gate field-effect
System_on_a_chip
Type of electrical circuit
equal because there is no low frequency or DC current into the gate of a MOSFET. However, there are always mismatches between transistors caused by random
Wilson_current_mirror
Pictogram used to represent various electrical and electronic devices or functions
Metal–oxide–semiconductor field-effect transistor (MOSFET) Enhancement mode, N‑channel MOSFET Enhancement mode, P‑channel MOSFET Vacuum tube diode Vacuum tube triode
Electronic_symbol
a type of thyristor that uses a MOSFET to turn on and turn off. It combines the advantages of both the GTO and MOSFET. It has two gates - one normal gate
Emitter_turn_off_thyristor
Taiwanese semiconductor company
company offers a range of products, including trench Schottky rectifiers, MOSFETs, TVS devices, transistors, analog ICs, and ESD protection devices. Taiwan
Taiwan Semiconductor Company Limited
Taiwan_Semiconductor_Company_Limited
complete voltage drops at the SITh. Thus the MOSFET is not exposed to high field stress. For fast switching the MOSFET with only 30–50 V blocking voltage is
MOS composite static induction thyristor
MOS_composite_static_induction_thyristor
Digital logic gate
to the faster charge mobility in n-MOSFETs compared to p-MOSFETs, so that the parallel connection of two p-MOSFETs realised in the NAND gate is more favourable
NOR_gate
Electronic circuit formed on a small, flat piece of semiconductor material
on the metal–oxide–semiconductor field-effect transistor (MOSFET), forming MOS ICs. The MOSFET was developed at Bell Labs between 1955 and 1960, enabling
Integrated_circuit
Type of non-planar transistor
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the
Fin_field-effect_transistor
Part of computer memory
Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops, along with MOS capacitors for certain types of RAM. The
Memory_cell_(computing)
Control, communication, and entertainment systems in cars and other motor vehicles
power MOSFET and the microcontroller, a type of single-chip microcomputer, led to significant advances in electric vehicle technology. MOSFET power converters
Automotive_electronics
Discrete device in an electronic system
(p-type MOS) NMOS (n-type MOS) CMOS (complementary MOS) Power MOSFET LDMOS (lateral diffused MOSFET) MuGFET (multi-gate field-effect transistor) FinFET (fin
Electronic_component
Type of solid-state switch
light-triggered thyristor LASS: light-activated semiconducting switch MCT: MOSFET Controlled Thyristor: It contains two additional FET structures for on/off
Thyristor
Technique for characterizing semiconductor materials and devices
metal–semiconductor junction (Schottky barrier) or a p–n junction or a MOSFET to create a depletion region, a region which is empty of conducting electrons
Capacitance–voltage_profiling
Semiconductor manufacturing processes
The 180 nm process is a MOSFET (CMOS) semiconductor process technology that was commercialized around the 1998–2000 timeframe by leading semiconductor
180_nm_process
Common transistor type
The 2N7000 is an N-channel, enhancement-mode MOSFET used for low-power switching applications. The 2N7000 is a widely available and popular part, often
2N7000
Trend to manufacture ever smaller products and devices
In electronics, the exponential scaling and miniaturization of silicon MOSFETs (MOS transistors) leads to the number of transistors on an integrated circuit
Miniaturization
Device using a field effect transistor
most common type of FET amplifier is the MOSFET amplifier, which uses metal–oxide–semiconductor FETs (MOSFETs). The main advantage of a FET used for amplification
FET_amplifier
continuity in current and its derivatives in all operation regimes of the MOSFET devices. The model has been successfully used in CAD/EDA simulation tools
MASTAR_MOSFET_Model
Semiconductor Fabrication Technique
is a transistor manufacturing approach whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect transistor) is used as a mask for
Self-aligned_gate
as germanium and carbon. Germanium doping of up to 20% in the P-channel MOSFET source and drain causes uniaxial compressive strain in the channel, increasing
Strained_silicon
Semiconductor manufacturing processes
International Roadmap for Devices and Systems defines the "5 nm" process as the MOSFET technology node following the "7 nm" node. In 2020, Samsung and TSMC entered
5_nm_process
Form of digital logic family in integrated circuits
or nMOS logic (from N-type metal–oxide–semiconductor) uses n-type (-) MOSFETs (metal–oxide–semiconductor field-effect transistors) to implement logic
NMOS_logic
Advanced lithographic node used in volume CMOS semiconductor fabrication
The 65 nm process is an advanced lithographic node used in volume CMOS (MOSFET) semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths)
65_nm_process
Model of electronic circuits involving transistors
Miller effect, respectively. A basic, low-frequency hybrid-pi model for the MOSFET is shown in figure 2. The various parameters are as follows. g m = i d v
Hybrid-pi_model
transistor in 1948, the integrated circuit chip in 1959, and the silicon MOSFET (metal–oxide–semiconductor field-effect transistor) in 1959. In the UK,
History of electronics engineering
History_of_electronics_engineering
Type of field-effect transistor
Silicon MOSFETs. In this combination, SiC JFET + Si MOSFET devices have the advantages of wide band-gap devices as well as the easy gate drive of MOSFETs. The
JFET
Integrated circuit customized for a specific task
(FinFET) Floating-gate MOSFET (FGMOS) Insulated-gate bipolar transistor (IGBT) ISFET LDMOS MOS field-effect transistor (MOSFET) Multi-gate field-effect
Application-specific integrated circuit
Application-specific_integrated_circuit
Type of electronic amplifier
solid-state devices, predominantly MOSFETs (metal–oxide–semiconductor field-effect transistors). The earliest MOSFET-based RF amplifiers date back to the
RF_power_amplifier
MOSFET technology node
The 14 nanometer process refers to a marketing term for the MOSFET technology node that is the successor to the 22 nm (or 20 nm) node. The 14 nm was so
14_nm_process
Field-effect transistor device
the conventional bulk metal-oxide-semiconductor field-effect transistor (MOSFET), where the semiconductor material typically is the substrate, such as a
Thin-film_transistor
MOSFET technology node
In semiconductor manufacturing, the "7 nm" process is a term for the MOSFET technology node following the "10 nm" node, defined by the International Roadmap
7_nm_process
Effect in field effect transistors
reduction of output resistance. It is one of several short-channel effects in MOSFET scaling. It also causes distortion in JFET amplifiers. To understand the
Channel_length_modulation
Electronic amplifier circuit type
input capacitance and lowering the overall bandwidth. Figure 3 shows a MOSFET common-source amplifier with an active load. Figure 4 shows the corresponding
Common_source
Type of buck convertor for regulation
On personal computer (PC) systems, the VRM is typically made up of power MOSFET devices. Most voltage regulator module implementations are soldered onto
Voltage_regulator_module
Excess voltage in a MOSFET transistor
usually abbreviated as VOV, is typically referred to in the context of MOSFET transistors. The overdrive voltage is defined as the voltage between transistor
Overdrive_voltage
Form of digital logic family in integrated circuits
for many microprocessors and other logic elements. Depletion-mode n-type MOSFETs as load transistors allow single voltage operation and achieve greater
Depletion-load_NMOS_logic
Background operating conditions for electronics
saturation. The same requirement applies to a MOSFET amplifier, although the terminology differs a little: the MOSFET must stay in the active mode, and avoid
Biasing
Serbian-American engineer and inventor (1856–1943)
Radiotelephone Satellite communications Semaphore Phryctoria Semiconductor device MOSFET transistor Smoke signals Telecommunications history Telautograph Telegraphy
Nikola_Tesla
Type of resistor whose resistance varies with temperature
(FinFET) Floating-gate MOSFET (FGMOS) Insulated-gate bipolar transistor (IGBT) ISFET LDMOS MOS field-effect transistor (MOSFET) Multi-gate field-effect
Thermistor
Type of semiconductor
transistor (MOSFET). VMOS is also used to describe the V-groove shape vertically cut into the substrate material. The "V" shape of the MOSFET's gate allows
VMOS
Electronic device/component that increases the strength of a signal
metal–oxide–semiconductor field-effect transistor (MOSFET) by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959. Due to MOSFET scaling, the ability to scale down
Amplifier
Electrical circuit used to power a LED
Active constant current is typically regulated using a depletion-mode MOSFET (metal–oxide–semiconductor field-effect transistor), which is the simplest
LED_circuit
Semiconductor manufacturing process
The 1 μm process (1 micrometer process) is a level of MOSFET semiconductor process technology that was commercialized around the 1984–1986 timeframe, by
1_μm_process
Unity gain amplifier with low output impedance
is no longer RL but instead is infinite (at low frequencies) because the MOSFET draws no current. As frequency is increased, the parasitic capacitances
Buffer_amplifier
Type of field-effect transistor
and oxide surfaces arises due to an ion sheath. It is a special type of MOSFET (metal–oxide–semiconductor field-effect transistor), and shares the same
ISFET
MOSFET
MOSFET
MOSFET
MOSFET
Girl/Female
Anglo, British, English
Elf from the Willow Trees
Boy/Male
Indian, Kannada, Tamil
Benevolent; Charitable
Boy/Male
American, Australian, British, Chinese, Christian, English
Row of Houses by the Wood; The Path through the Woods; Lives in a Row of Houses by the Wood
Girl/Female
Gujarati, Hindu, Indian, Kannada, Malayalam, Marathi, Telugu
One with Very Slim Figure
Boy/Male
Tamil
Murukan | à®®à¯à®°à¯à®•à®¾à®¨Â
Lord Murugan
Girl/Female
Hindu
Well-born (Wife of Virata maharaja)
Boy/Male
Tamil
Gajananan | கஜாநநந
Lord ganapathy
Girl/Female
Arabic, Indian, Kannada, Muslim, Sindhi
Virtuous; Decent; Pure; Chastity; Purity; Modesty
Boy/Male
Indian
Name of a companion
Boy/Male
Native American
Tail of the fox.
MOSFET
MOSFET
MOSFET
MOSFET
MOSFET