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Device that prevents a transistor from saturating
A Schottky transistor is a combination of a transistor and a Schottky diode that prevents the transistor from saturating by diverting the excessive input
Schottky_transistor
Potential energy barrier in metal–semiconductor junctions
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers
Schottky_barrier
German physicist and electrical engineer (1886-1976)
rectifiers and transistors. Walter Schottky was born on 23 July 1886 in Zurich, Switzerland, the son of mathematician Friedrich Schottky, who had been
Walter_Schottky
Type of electrical junction
region of a transistor and the external circuitry. Occasionally, however, a Schottky barrier is useful, as in Schottky diodes, Schottky transistors, and metal–semiconductor
Metal–semiconductor_junction
Semiconductor diode
The Schottky diode (named after the German physicist Walter Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode
Schottky_diode
Class of digital circuits
James R. Biard filed a patent for the Schottky transistor. In his patent the Schottky diode prevented the transistor from saturating by minimizing the forward
Diode–transistor_logic
Topics referred to by the same term
Schottky diode and Schottky barrier in electronics and physics Schottky transistor in electronics Schottky group in mathematics Schottky defect in condensed
Schottky
Type of transistor
of transistor operation by eliminating the traditional transistor's area of electron conduction. The SB-FET (Schottky-barrier field-effect transistor) is
Field-effect_transistor
Solid-state electrically operated switch also used as an amplifier
common in modern ultrafast and RF circuits Schottky transistor avalanche transistor Darlington transistors are two BJTs connected together to provide
Transistor
Type of transistor developed by Philco in 1953
the earlier point-contact transistor. Like the modern Schottky transistor, it offered much higher speed than earlier transistors and used metal–semiconductor
Surface-barrier_transistor
Type of bipolar junction transistor
The germanium alloy-junction transistor, or alloy transistor, was an early type of bipolar junction transistor, developed at General Electric and RCA
Alloy-junction_transistor
Type of field-effect transistor
(metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction
MESFET
Type of transistor
A diffused junction transistor is a transistor formed by diffusing dopants into a semiconductor substrate. The diffusion process was developed later than
Diffused_junction_transistor
Transistor that uses both electrons and holes as charge carriers
junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such
Bipolar_junction_transistor
Class of digital circuits
Transistor–transistor logic (TTL) is a logic family built from bipolar junction transistors (BJTs). Its name signifies that transistors perform both the
Transistor–transistor_logic
Form of transistor that emits light
A light-emitting transistor or LET is a form of transistor that emits light. Higher efficiency than light-emitting diode (LED) is possible.[citation needed]
Light-emitting_transistor
Transistor with four active terminals
A tetrode transistor is any transistor having four active terminals. There were two types of tetrode transistor developed in the early 1950s as an improvement
Tetrode_transistor
Multi-transistor electronics configuration
bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified
Darlington_transistor
transistors in a single IC. The first gallium-arsenide Schottky-gate field-effect transistor (MESFET) was made by Carver Mead and reported in 1966. The
History_of_the_transistor
Type of solid state switch
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to
Insulated-gate bipolar transistor
Insulated-gate_bipolar_transistor
Electronic component that exploits the electronic properties of semiconductor materials
diode Schottky diode Solar cell Transient-voltage-suppression diode Tunnel diode VCSEL Zener diode Zen diode Three-terminal devices: Bipolar transistor Darlington
Semiconductor_device
Type of field-effect transistor
metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated
MOSFET
Class of electronic circuit
solution is to integrate the combination of a Schottky diode and transistor into one Schottky transistor. Some sources also refer to this configuration
Baker_clamp
Pictogram used to represent various electrical and electronic devices or functions
electronic devices or functions, such as wires, batteries, resistors, and transistors, in a schematic diagram of an electrical or electronic circuit. These
Electronic_symbol
Diode that emits light from an organic compound
sequentially, one by one Active-matrix (AMOLED) that uses a thin-film transistor (TFT) backplane to directly access and switch each individual pixel on
OLED
Semiconductor light source
Heterostructure-emitter bipolar transistor (HEBT) ITFET Avalanche transistor Junctionless nanowire transistor (JLNT) Schottky transistor Spin transistor Ballistic collection
Light-emitting_diode
Type of field-effect transistor
An organic field-effect transistor (OFET) is a field-effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum
Organic field-effect transistor
Organic_field-effect_transistor
Type of non-planar transistor
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the
Fin_field-effect_transistor
Central computer component that executes instructions
in large quantities. This standardization began in the era of discrete transistor mainframes and minicomputers, and has rapidly accelerated with the popularization
Central_processing_unit
Type of field-effect transistor
high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating
High-electron-mobility transistor
High-electron-mobility_transistor
First successful type of transistor, developed in 1947
The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and
Point-contact_transistor
Ballistic deflection transistors (BDTs) are electronic devices, developed since 2006, for high-speed integrated circuits, which is a set of circuits bounded
Ballistic deflection transistor
Ballistic_deflection_transistor
Bipolar junction transistor operated in the avalanche breakdown region
An avalanche transistor is a bipolar junction transistor designed for operation in the region of its collector-current/collector-to-emitter voltage characteristics
Avalanche_transistor
Type of field-effect transistor
A ChemFET is a chemically-sensitive field-effect transistor, that is a field-effect transistor used as a sensor for measuring chemical concentrations
Chemical field-effect transistor
Chemical_field-effect_transistor
Either of two concepts in computer engineering
physicist Walter H. Schottky formulated a theory predicting the Schottky effect, which led to the Schottky diode and later Schottky transistors. For the same
Logic_family
Experimental transistor
The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor
Tunnel field-effect transistor
Tunnel_field-effect_transistor
Two-terminal electronic component
semiconductor devices, such as IGBTs, power MOSFETs, and thyristors. Schottky diodes Schottky diodes are constructed from metal to semiconductor contact. They
Diode
A synaptic transistor is an electrical device that can learn in ways similar to a neural synapse. It optimizes its own properties for the functions it
Synaptic_transistor
Field-effect transistor device
A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is made by thin-film deposition. TFTs are grown on
Thin-film_transistor
Diode that allows current to flow in the reverse direction at a specific voltage
silicon transistor at around −2 mV/°C, so in a simple regulating circuit where the 4.7 V diode sets the voltage at the base of an NPN transistor (i.e. their
Zener_diode
MOS field-effect transistor with more than one gate
field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The
Multigate_device
Discrete device in an electronic system
transistor) Composite transistors BiCMOS (bipolar CMOS) IGBT (Insulated-gate bipolar transistor) Other transistors Bipolar junction transistor (BJT
Electronic_component
Transistor using different semiconductor materials
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and
Heterojunction bipolar transistor
Heterojunction_bipolar_transistor
Device that controls current between electrodes
Beginning in the mid-1960s, thermionic tubes were being replaced by the transistor and solid-state semiconductor technology. However, the cathode-ray tube
Vacuum_tube
Type of transistor
The organic electrochemical transistor (OECT) is an organic electronic device which functions like a transistor. The current flowing through the device
Organic electrochemical transistor
Organic_electrochemical_transistor
DC linear voltage regulator
{R_{1}}{R_{2}}}\right)V_{\text{ref}}\ .} If a bipolar transistor is used, as opposed to a field-effect transistor or JFET, significant additional power may be
Low-dropout_regulator
Type of transistor
A unijunction transistor (UJT) is a three-lead electronic semiconductor device with only one junction. It acts exclusively as an electrically controlled
Unijunction_transistor
Type of junction-gate field effect transistor
The static induction transistor (SIT) is a type of field-effect transistor (FET) capable of high-speed and high-power operation, with low distortion and
Static_induction_transistor
Technology for constructing integrated circuits
/ˈsiːmɒs/ SEE-moss) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs
CMOS
Class of digital circuits
families by using Schottky diodes, as in Schottky TTL. NORBIT Transistor–transistor logic Diode–transistor logic Diode logic "2. Computers On Board The
Resistor–transistor_logic
Transistor with 5 active terminals
A pentode transistor is any transistor having five active terminals. One early pentode transistor was developed in the early 1950s as an improvement over
Pentode_transistor
Nonlinear two-terminal fundamental circuit element
fundamentally from that of a metal oxide semiconductor transistor, which is capacitor-based. Unlike the transistor, the final state of the memristor in terms of
Memristor
Theoretical transistor
A nanoscale vacuum-channel transistor (NVCT) is a transistor in which the electron transport medium is a vacuum, much like a vacuum tube. In a traditional
Nanoscale vacuum-channel transistor
Nanoscale_vacuum-channel_transistor
Connector used to connect to mains power
Heterostructure-emitter bipolar transistor (HEBT) ITFET Avalanche transistor Junctionless nanowire transistor (JLNT) Schottky transistor Spin transistor Ballistic collection
AC_power_plugs_and_sockets
Four-layer solid-state current-controlling device
short-circuit the anode and cathode momentarily with a push-button switch or transistor across the junction. When a negative voltage is applied to the anode and
Silicon_controlled_rectifier
An oxide thin-film transistor (oxide TFT) or metal oxide thin film transistor is a type of thin film transistor where the semiconductor is a metal oxide
Oxide_thin-film_transistor
Family of digital circuits
on p-channel, enhancement mode metal–oxide–semiconductor field-effect transistors (MOSFETs). In the late 1960s and early 1970s, PMOS logic was the dominant
PMOS_logic
Vacuum tube used to display images
electromechanical meter, which later came to be used on higher-end tuners when transistor sets lacked the high voltage required to drive the device. The same type
Cathode_ray_tube
Other IC package types include diode outline (DO), transistor outline (TO), and small outline transistor (SOT). QUADRACs that use metal electrode leadless
Quadrac
Early type of semiconductor rectifier
operation of a metal rectifier is related to modern semiconductor rectifiers (Schottky diodes and p–n diodes), but somewhat more complex. Both selenium and copper
Metal_rectifier
Electronic component
Heterostructure-emitter bipolar transistor (HEBT) ITFET Avalanche transistor Junctionless nanowire transistor (JLNT) Schottky transistor Spin transistor Ballistic collection
Transient-voltage-suppression diode
Transient-voltage-suppression_diode
Type of field-effect transistor
A ferroelectric field-effect transistor (Fe FET) is a type of field-effect transistor that includes a ferroelectric material sandwiched between the gate
Fe_FET
Primitive type of bipolar junction transistor
The grown-junction transistor was the first type of bipolar junction transistor made. It was invented by William Shockley at Bell Labs on June 23, 1948
Grown-junction_transistor
Semiconductor device
development of the GTO, and insulated-gate bipolar transistors (IGBT), which are members of the transistor family. They are also used in the starter circuits
Gate_turn-off_thyristor
Converts light into current
is a light-sensitive transistor. A common type of phototransistor, the bipolar phototransistor, is in essence a bipolar transistor encased in a transparent
Photodiode
Type of field-effect transistor
The junction field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that
JFET
High frequency semiconductor
Heterostructure-emitter bipolar transistor (HEBT) ITFET Avalanche transistor Junctionless nanowire transistor (JLNT) Schottky transistor Spin transistor Ballistic collection
BARITT_diode
Electronic circuit formed on a small, flat piece of semiconductor material
electronic circuits formed from various electronic components, such as transistors, resistors, and capacitors, and their interconnections. These components
Integrated_circuit
Light emitting diode with phototransistor
Heterostructure-emitter bipolar transistor (HEBT) ITFET Avalanche transistor Junctionless nanowire transistor (JLNT) Schottky transistor Spin transistor Ballistic collection
Photoreflector
Electronic component
Heterostructure-emitter bipolar transistor (HEBT) ITFET Avalanche transistor Junctionless nanowire transistor (JLNT) Schottky transistor Spin transistor Ballistic collection
Resettable_fuse
The Heterojunction-emitter bipolar transistor (HEBT), is a somewhat unusual arrangement with respect to emitter blocking of minority carriers. This is
Heterostructure-emitter bipolar transistor
Heterostructure-emitter_bipolar_transistor
Vacuum tube which generates high-frequency radio waves
Heterostructure-emitter bipolar transistor (HEBT) ITFET Avalanche transistor Junctionless nanowire transistor (JLNT) Schottky transistor Spin transistor Ballistic collection
Gyrotron
Type of vacuum tube; early radio detector
radars, and early digital computers for 50 years, until the advent of the transistor in the 1950s. Fleming sued De Forest for infringing his valve patents
Fleming_valve
Type of field-effect transistor
An EOSFET or electrolyte–oxide–semiconductor field-effect transistor is a FET, like a MOSFET, but with an electrolyte solution replacing the metal for
EOSFET
Electrical device
inductors, which could cause damage to components. Fast conventional diodes or Schottky diodes may be used. The resistances in the inductors and the capacitors
Single-ended primary-inductor converter
Single-ended_primary-inductor_converter
Solid-state photodetector
onset of the avalanche current across a 50 Ω resistor (or integrated transistor) and provides a digital (CMOS, TTL, ECL, NIM) output pulse, synchronous
Single-photon_avalanche_diode
Electronic component
reliable low-voltage support capacitor to complement their newly invented transistor. With the development of plastic materials by organic chemists during
Capacitor
Type of diode
varicaps include LEDs, 1N400X series rectifier diodes, Schottky rectifiers and various transistors used with their collector-base junctions reverse biased
Varicap
Late vacuum tube design designed to compete with transistors
junction transistors, and were much smaller than conventional tubes of the day, almost approaching the compactness of early discrete transistor casings
Nuvistor
Type of MOSFET where the gate is electrically isolated
as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate
Floating-gate_MOSFET
Egyptian engineer (1924–2009)
semiconductor-metal emitter. It was one of the first metal-base transistors. The Schottky diode went on to assume a prominent role in mixer applications
Mohamed_M._Atalla
Passive electronic component providing electrical resistance
otherwise disconnected (such as when a button is not pushed down or a transistor is not active). A pull-up resistor connects the circuit to a high positive
Resistor
Type of field-effect transistor
An ion-sensitive field-effect transistor (ISFET) is a field-effect transistor used for measuring ion concentrations in solution; when the ion concentration
ISFET
Electronic device
A single-electron transistor (SET) is a sensitive electronic device based on the Coulomb blockade effect. In this device the electrons flow through a tunnel
Single-electron_transistor
drift-field transistor, also called the drift transistor or graded base transistor, is a type of high-speed bipolar junction transistor having a doping-engineered
Drift-field_transistor
Semiconductor device with variable capacitance
two, back to back, anti-serially connected rectifying diodes (such as Schottky diodes for instance). The gap in the middle of the diode symbol represents
Heterostructure barrier varactor
Heterostructure_barrier_varactor
Type of voltage regulator
output transistor. The shunt regulator works by providing a path from the supply voltage to ground through a variable resistance (the main transistor is in
Linear_regulator
gate is connected to the telecom circuit's power supply (via a diode or transistor), causing the device to activate if the transient voltage exceeds the
Trisil
Part of computer memory
single-transistor DRAM memory cell, based on MOS technology. The first commercial bipolar 64-bit SRAM was released by Intel in 1969 with the 3101 Schottky TTL
Memory_cell_(computing)
Sensors of light or other electromagnetic energy
depletion region and improves the device's performance. b. Schottky Photodiodes: In Schottky photodiodes, a metal-semiconductor junction is used instead
Photodetector
Electrical connector designed to work at radio frequencies
Heterostructure-emitter bipolar transistor (HEBT) ITFET Avalanche transistor Junctionless nanowire transistor (JLNT) Schottky transistor Spin transistor Ballistic collection
RF_connector
A DNA field-effect transistor (DNAFET) is a field-effect transistor which uses the field-effect due to the partial charges of DNA molecules to function
DNA_field-effect_transistor
Electronic circuits that utilize digital signals
invented the point-contact transistor at Bell Labs in 1947, followed by William Shockley inventing the bipolar junction transistor at Bell Labs in 1948. At
Digital_electronics
Type of MOSFET
field-effect transistor (QFET) or quantum-well field-effect transistor (QWFET) is a type of MOSFET (metal–oxide–semiconductor field-effect transistor) that takes
QFET
Type of diode
one photon can be registered with these electronic devices. Avalanche transistor Transient-voltage-suppression diode L. W. Turner, (ed.), Electronics Engineer's
Avalanche_diode
Electronic device/component that increases the strength of a signal
until the transistor provided smaller and higher quality amplifiers in the 1950s. The first working transistor was a point-contact transistor invented
Amplifier
The inverted-T field-effect transistor (ITFET) is a type of field effect transistor invented by Leo Mathew at Freescale Semiconductor. Part of the device
ITFET
Type of semiconductor
programmable unijunction transistor (PUT) is a three-lead electronic semiconductor device that is similar to a unijunction transistor (UJT), except that its
Programmable unijunction transistor
Programmable_unijunction_transistor
Junction-Less nanowire transistor (JLNT) is a type of Field-effect transistor (FET) in which the channel consists of one or more nanowires and does not
Junctionless nanowire transistor
Junctionless_nanowire_transistor
System designed to maintain a constant voltage
used with the base of the regulating transistor connected directly to the voltage reference: A simple transistor regulator will provide a relatively constant
Voltage_regulator
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SCHOTTKY TRANSISTOR
SCHOTTKY TRANSISTOR
SCHOTTKY TRANSISTOR
SCHOTTKY TRANSISTOR
SCHOTTKY TRANSISTOR
SCHOTTKY TRANSISTOR
SCHOTTKY TRANSISTOR
SCHOTTKY TRANSISTOR
SCHOTTKY TRANSISTOR
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