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Transistor that uses both electrons and holes as charge carriers
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor
Bipolar_junction_transistor
Type of solid state switch
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to
Insulated-gate bipolar transistor
Insulated-gate_bipolar_transistor
Transistor using different semiconductor materials
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and
Heterojunction bipolar transistor
Heterojunction_bipolar_transistor
Bipolar junction transistor operated in the avalanche breakdown region
An avalanche transistor is a bipolar junction transistor designed for operation in the region of its collector-current/collector-to-emitter voltage characteristics
Avalanche_transistor
Type of transistor
alloy-junction and grown junction processes for making bipolar junction transistors (BJTs). Bell Labs developed the first prototype diffused junction bipolar
Diffused_junction_transistor
Multi-transistor electronics configuration
two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is
Darlington_transistor
First successful type of transistor, developed in 1947
point-contact transistor was commercialized and sold by Western Electric and others but was eventually superseded by the bipolar junction transistor, which was
Point-contact_transistor
Primitive type of bipolar junction transistor
The grown-junction transistor was the first type of bipolar junction transistor made. It was invented by William Shockley at Bell Labs on June 23, 1948
Grown-junction_transistor
Solid-state electrically operated switch also used as an amplifier
field-effect transistor, or may have two kinds of charge carriers in bipolar junction transistor devices. Compared with the vacuum tube, transistors are generally
Transistor
Type of bipolar junction transistor
The germanium alloy-junction transistor, or alloy transistor, was an early type of bipolar junction transistor, developed at General Electric and RCA in
Alloy-junction_transistor
Semiconductor–semiconductor junction
combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in the form n–p–n or p–n–p. Combinations
P–n_junction
inventions in history. Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). The principle
History_of_the_transistor
Type of field-effect transistor
controlled switches or resistors, or to build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not
JFET
Type of transistor
transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET
Field-effect_transistor
Type of field-effect transistor
steady-state or low-frequency conditions, especially compared to bipolar junction transistors (BJTs). However, at high frequencies or when switching rapidly
MOSFET
Electronic component that exploits the electronic properties of semiconductor materials
light-emitting diodes and laser diodes. Bipolar junction transistors (BJTs) are formed from two p–n junctions, in either n–p–n or p–n–p configuration
Semiconductor_device
Transistor with four active terminals
logic gates. Diffused planar silicon bipolar junction transistor, used in some integrated circuits. This transistor, apart from the three electrodes (emitter
Tetrode_transistor
Process necessary for BJT amplifiers to work correctly
setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC
Bipolar_transistor_biasing
drift-field transistor, also called the drift transistor or graded base transistor, is a type of high-speed bipolar junction transistor having a doping-engineered
Drift-field_transistor
Class of electronic circuit
electronic circuits that reduce the storage time of a switching bipolar junction transistor (BJT) by applying a nonlinear negative feedback through various
Baker_clamp
Loss of control of an exothermal process due to temperature increases
semiconductor junction failures. Leakage current increases significantly in bipolar transistors (especially germanium-based bipolar transistors) as they increase
Thermal_runaway
Common NPN bipolar junction transistor
The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for
2N2222
Silicon low-power transistor
The KT315 is a Soviet silicon NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications, enclosed in the
KT315
from the Heterojunction bipolar transistor (HBT) is that the emitter–base interface is the same as in a bipolar junction transistor (BJT) with the blocking
Heterostructure-emitter bipolar transistor
Heterostructure-emitter_bipolar_transistor
MOSFET that can handle significant power levels
transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar
Power_MOSFET
Electronic device/component that increases the strength of a signal
invented the bipolar junction transistor (BJT) in 1948. They were followed by the invention of the metal–oxide–semiconductor field-effect transistor (MOSFET)
Amplifier
Common PNP bipolar junction transistor
The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. It is designed
2N3906
Magnetic effect in insulators between ferromagnets
magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by
Tunnel_magnetoresistance
Topics referred to by the same term
Junction transistor usually means bipolar junction transistor. It may also refer to: Grown-junction transistor Alloy-junction transistor Unijunction transistor
Junction transistor (disambiguation)
Junction_transistor_(disambiguation)
Type of electronic amplifier using a bipolar junction transistor
common-emitter amplifier is one of three basic single-stage bipolar-junction-transistor (BJT) amplifier topologies, typically used as a voltage amplifier
Common_emitter
Type of transistor in electronic equipment
NPN bipolar junction transistor commonly used in European and American electronic equipment. It is notably often the first type of bipolar transistor hobbyists
BC548
Class of digital circuits
digital circuits built using resistors as the input network and bipolar junction transistors (BJTs) as switching devices. RTL is the earliest class of transistorized
Resistor–transistor_logic
Family of digital circuits
of the area of a bipolar junction transistor. The main reason is that the MOSFET is self-insulating and does not require p–n junction isolation from neighboring
PMOS_logic
Type of transistor developed by Philco in 1953
The surface-barrier transistor is a type of transistor developed by Philco in 1953 as an improvement to the alloy-junction transistor and the earlier point-contact
Surface-barrier_transistor
Semiconductor technology
Bipolar CMOS (BiCMOS) is a semiconductor technology that integrates two semiconductor technologies, those of the bipolar junction transistor and the CMOS
BiCMOS
Type of field-effect transistor
field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a
MESFET
American physicist (1910–1989)
variants of the transistor and other devices based on semiconductors. This resulted in his invention of the bipolar junction transistor, which was announced
William_Shockley
Electrical circuit
exponential current–voltage relationship of a p–n junction (either from a diode or bipolar junction transistor) as negative feedback to compute the logarithm
Log_amplifier
Pictogram used to represent various electrical and electronic devices or functions
junction transistor (BJT) PNP bipolar junction transistor (BJT) NPN Darlington transistor PNP Darlington transistor NPN Phototransistor N-channel junction gate
Electronic_symbol
Diode that emits light from an organic compound
controlled sequentially, one by one, whereas AMOLED control uses a thin-film transistor (TFT) backplane to directly access and switch each individual pixel on
OLED
Type of field-effect transistor
Si/SiGe. The advantages of HEMTs over other transistor architectures, like the bipolar junction transistor and the MOSFET, are the higher operating temperatures
High-electron-mobility transistor
High-electron-mobility_transistor
Specialized bipolar transistor
A multiple-emitter transistor is a specialized bipolar transistor mostly used at the inputs of integrated circuit TTL NAND logic gates. Input signals are
Multiple-emitter_transistor
Transistor switch output for integrated circuits
converters. The NPN BJT (n-type bipolar junction transistor) and nMOS (n-type metal oxide semiconductor field effect transistor) have greater conductance than
Open_collector
Type of field-effect transistor
An organic field-effect transistor (OFET) is a field-effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum
Organic field-effect transistor
Organic_field-effect_transistor
Form of transistor that emits light
An organic light-emitting transistor (OLET) is a form of transistor that emits light. These transistors have potential for digital displays and on-chip
Organic light-emitting transistor
Organic_light-emitting_transistor
Semiconductor physics terminology
the electrons' carrier lifetime in solar cells. A bipolar junction transistor is a type of transistor that is able to use electrons and electron holes
Carrier_lifetime
Four-layer solid-state current-controlling device
etc. Bipolar junction transistor Crowbar (circuit) DIAC Gate turn-off thyristor High-voltage direct current Insulated-gate bipolar transistor Integrated
Silicon_controlled_rectifier
Two-terminal electronic component
Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential
Diode
Central computer component that executes instructions
continued to build processors out of bipolar transistor–transistor logic (TTL) chips because bipolar junction transistors were faster than MOS chips up until
Central_processing_unit
Variation in the effective width of the base in a bipolar junction transistor
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage
Early_effect
Class of digital circuits
Transistor–transistor logic (TTL) is a logic family built from bipolar junction transistors (BJTs). Its name signifies that transistors perform both the
Transistor–transistor_logic
Common NPN bipolar junction transistor
The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. It is designed for low
2N3904
Semiconductor device capable of handling large amounts of electricity
(53%) of the power transistor market, followed by the IGBT (27%), then the RF amplifier (11%), and then the bipolar junction transistor (9%). A power device
Power_semiconductor_device
Common transistor type
relays. In switching circuits, these FETs can be used much like bipolar junction transistors, but have some advantages: high input impedance of the insulated
2N7000
Classification of power amplifier
lower cost of class-AB chips. In the illustrations below, a bipolar junction transistor is shown as the amplifying device. However, the same attributes
Power_amplifier_classes
Integrated circuit used for timer applications
The design was first marketed in 1972 by Signetics and used bipolar junction transistors. Since then, numerous companies have made the original timers
555_timer_IC
Unity gain amplifier with low output impedance
interference. Other unity gain buffer amplifiers include the bipolar junction transistor in common-collector configuration (called an emitter follower
Buffer_amplifier
or VBE multiplier is a bipolar junction transistor circuit that serves as a voltage reference. It consists of one transistor and two resistors, and the
Rubber_diode
Ballistic deflection transistors (BDTs) are electronic devices, developed since 2006, for high-speed integrated circuits, which is a set of circuits bounded
Ballistic deflection transistor
Ballistic_deflection_transistor
Background operating conditions for electronics
ohmic operation.[citation needed] For bipolar junction transistors the bias point is chosen to keep the transistor operating in the active mode, using a
Biasing
DC linear voltage regulator
{R_{1}}{R_{2}}}\right)V_{\text{ref}}\ .} If a bipolar transistor is used, as opposed to a field-effect transistor or JFET, significant additional power may
Low-dropout_regulator
Discrete device in an electronic system
transistor) Composite transistors BiCMOS (bipolar CMOS) IGBT (Insulated-gate bipolar transistor) Other transistors Bipolar junction transistor (BJT
Electronic_component
Programmable machine that processes data
the first working transistor, the point-contact transistor, in 1947, which was followed by Shockley's bipolar junction transistor in 1948. From 1955
Computer
PNP bipolar transistor
The 2N2907 is a commonly available PNP bipolar junction transistor used for general purpose low-power amplifying or switching applications. It is designed
2N2907
Type of non-planar transistor
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the
Fin_field-effect_transistor
Type of voltage amplifier
grounded-base) amplifier is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a current buffer
Common_base
Thermometer used in electronic equipment
voltage of a silicon diode, which may be the base-emitter junction of a bipolar junction transistor (BJT), is temperature-dependent, according to the following
Silicon bandgap temperature sensor
Silicon_bandgap_temperature_sensor
Semiconductor light source
Hasegawa, M.; Kanda, H. (2001). "Ultraviolet Emission from a Diamond pn Junction". Science. 292 (5523): 1899–1901. Bibcode:2001Sci...292.1899K. doi:10.1126/science
Light-emitting_diode
Electronic circuit formed on a small, flat piece of semiconductor material
the creation of high-density ICs. Unlike bipolar transistors, which required additional steps for p–n junction isolation, MOSFETs could be easily isolated
Integrated_circuit
Two-stage amplifier in an electronic circuit
using bipolar junction transistors (BJTs) or alternatively a common source stage feeding a common gate stage when using field-effect transistors (FETs)
Cascode
Term used in electricity-related fields
bipolar junction transistor (BJT) can be simplistically thought of as two diodes with a shared terminal (anode for the PNP variety), the transistor polarity
Electrical_polarity
Device that prevents a transistor from saturating
Schottky-clamped transistor. Standard transistor–transistor logic (TTL) uses transistors as saturated switches. A saturated transistor is turned on hard
Schottky_transistor
Type of transistor amplifier
single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a voltage buffer. In this circuit, the base terminal of the transistor serves
Common_collector
LC oscillator design
oscillators, consists of a gain device (such as a bipolar junction transistor, field-effect transistor, operational amplifier, or vacuum tube) with its
Colpitts_oscillator
Converts light into current
base region of a bipolar junction transistor. The PPD (usually PNP) is used in CMOS active-pixel sensors; a precursor NPNP triple junction variant with the
Photodiode
Field-effect transistor device
A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is made by thin-film deposition. TFTs are grown on
Thin-film_transistor
Hermann Gummel Bipolar junction transistor Gummel–Poon model A. S. Zoolfakar et N. A. Shahrol, «Modelling of NPN Bipolar Junction Transistor Characteristics
Gummel_plot
material was called the collector. The injector acted like a BJT (bipolar junction transistor) emitter, the modulator like a base, and the collector like its
Spacistor
Model of the bipolar junction transistor
The Gummel–Poon model is a model of the bipolar junction transistor. It was first described in an article published by Hermann Gummel and H. C. Poon at
Gummel–Poon_model
Type of transistor
The organic electrochemical transistor (OECT) is an organic electronic device which functions like a transistor. The current flowing through the device
Organic electrochemical transistor
Organic_electrochemical_transistor
Experimental transistor
1952 published first investigations of a transistor containing the basic elements of the TFET, a gated p-n junction. The reported surface conductivity control
Tunnel field-effect transistor
Tunnel_field-effect_transistor
Diode that allows current to flow in the reverse direction at a specific voltage
The emitter–base junction of a bipolar NPN transistor behaves as a Zener diode, with breakdown voltage at about 6.8 V for common bipolar processes and about
Zener_diode
Nonlinear two-terminal fundamental circuit element
fundamentally from that of a metal oxide semiconductor transistor, which is capacitor-based. Unlike the transistor, the final state of the memristor in terms of
Memristor
Integrated circuit customized for a specific task
early bipolar gate arrays. In 1967, Fairchild Semiconductor introduced the Micromatrix family of bipolar diode–transistor logic (DTL) and transistor–transistor
Application-specific integrated circuit
Application-specific_integrated_circuit
Unpackaged integrated circuit
devices. Images of dies are commonly called die shots. Single NPN bipolar junction transistor die Die of an infrared receiver Close-up of an RGB light-emitting
Die_(integrated_circuit)
Technology for constructing integrated circuits
then discussed several complementary bipolar circuits. Paul Weimer, also at RCA, invented in 1962 thin-film transistor (TFT) complementary circuits, a close
CMOS
Type of transistor
A unijunction transistor (UJT) is a three-lead electronic semiconductor device with only one junction. It acts exclusively as an electrically controlled
Unijunction_transistor
Transistor that acts as a diode
junction-gate field-effect transistors (JFETs), and in the active region for bipolar junction transistors (BJTs). A diode-connected transistor is made by connecting
Diode-connected_transistor
Either of two concepts in computer engineering
digital circuits built using resistors as the input network and bipolar junction transistors (BJTs) as switching devices. The Atanasoff–Berry Computer used
Logic_family
Semiconductor device
development of the GTO, and insulated-gate bipolar transistors (IGBT), which are members of the transistor family. They are also used in the starter circuits
Gate_turn-off_thyristor
Semiconductor diode
employed as Baker clamps in parallel with the collector-base junctions of the bipolar transistors to prevent their saturation, thereby greatly reducing their
Schottky_diode
A synaptic transistor is an electrical device that can learn in ways similar to a neural synapse. It optimizes its own properties for the functions it
Synaptic_transistor
Electronic circuits that utilize digital signals
invented the point-contact transistor at Bell Labs in 1947, followed by William Shockley inventing the bipolar junction transistor at Bell Labs in 1948. At
Digital_electronics
Integrated circuit logic family
(ECL) is a high-speed integrated circuit bipolar transistor logic family. ECL uses a bipolar junction transistor (BJT) differential amplifier with single-ended
Emitter-coupled_logic
Active electronic circuit controlling the current through a load
1N4148, are called "switching diodes". The transistor can be operated as a switch. The bipolar junction transistor (BJT) cutoff and saturation regions of
Electronic_switch
Diode that works using quantum tunneling
state-of-the-art, with better performance at high frequencies than any transistor-based front end. The tunnel diode can also be used as a low-noise microwave
Tunnel_diode
Type of field-effect transistor
A ChemFET is a chemically-sensitive field-effect transistor, that is a field-effect transistor used as a sensor for measuring chemical concentrations
Chemical field-effect transistor
Chemical_field-effect_transistor
Phenomena related to electric charge
Walter Houser Brattain at Bell Labs in 1947, followed by the bipolar junction transistor in 1948. By modern convention, the charge carried by electrons
Electricity
the metal sheet is electrically connected to the die (for a bipolar junction transistor usually the collector is connected to this metal sheet). The
TO-126
American inventor (1907–2003)
necessary for the fabrication of bipolar junction transistors. He is most remembered for developing the first silicon transistor while at Texas Instruments
Gordon_Kidd_Teal
BIPOLAR JUNCTION-TRANSISTOR
BIPOLAR JUNCTION-TRANSISTOR
Girl/Female
Gujarati, Hindu, Indian, Marathi
Firm; The Polar Star; Constant; Faithful
Boy/Male
Hindu
The polar star, Constant, Faithful, Firm
Boy/Male
Gujarati, Hindu, Indian, Kannada, Malayalam, Marathi, Oriya, Sanskrit, Telugu
Star; Constant; Faithful; Firm; The Polar Star
Boy/Male
Arabic, Celebrity, Gujarati, Hindu, Indian, Kannada, Marathi, Muslim
Tall; Pivot; Pole; Axis; Celebrity; Polar Star's
Boy/Male
Hindu
Floating, Revolution
Surname or Lastname
English
English : nickname from the animal, Middle English catte ‘cat’. The word is found in similar forms in most European languages from very early times (e.g. Gaelic cath, Slavic kotu). Domestic cats were unknown in Europe in classical times, when weasels fulfilled many of their functions, for example in hunting rodents. They seem to have come from Egypt, where they were regarded as sacred animals.English : from a medieval female personal name, a short form of Catherine.Variant spelling of German and Dutch Katt.
Boy/Male
Tamil
Dhruvansh | தà¯à®°à¯à®µà®‚à®·Â
A part of polar star
Dhruvansh | தà¯à®°à¯à®µà®‚à®·Â
Boy/Male
Bengali, Indian
Revolution
Biblical
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Girl/Female
Bengali, Gujarati, Hindu, Indian, Kannada, Malayalam, Marathi, Sanskrit, Sindhi, Telugu
Star; The Polar Star; Constant; Faithful; Firm
Boy/Male
Tamil
The polar star, Constant, Faithful, Firm
Boy/Male
Tamil
The polar star, Firm, Unshakable
Boy/Male
Tamil
Floating, Revolution
Boy/Male
Indian
Boy/Male
Hindu
A part of polar star
Boy/Male
Buddhist, Indian, Japanese
Mysterious Function
Boy/Male
Indian, Sanskrit
Plenty; Much; Strong; Manifold
Surname or Lastname
English
English : topographic name for someone who lived by a watercourse or road junction, Old English gelǣt, or a habitational name from Leat in Devon, or The Leete in Essex, named with this element.
Girl/Female
Hindu, Indian, Marathi
Plenty; Strong
Boy/Male
Hindu
The polar star, Firm, Unshakable
BIPOLAR JUNCTION-TRANSISTOR
BIPOLAR JUNCTION-TRANSISTOR
Boy/Male
Australian, Biblical, French, Hebrew
Praising; Confessing; United
Girl/Female
Indian, Kannada, Marathi
Conquest; Complete Victory
Girl/Female
Hindu, Indian
Preety
Girl/Female
Australian, Gaelic, Hebrew
Great; Sun; Bitterness
Boy/Male
Hindu, Indian, Marathi
Fame; Reputation
Girl/Female
Indian
Old Arabic name
Girl/Female
Bengali, Hindu, Indian, Kannada, Malayalam, Marathi, Sanskrit, Sindhi, Tamil, Telugu
Goddess Durga
Boy/Male
Hindu
Victory
Girl/Female
Hindu
Boy/Male
American, British, English
Royal Ruler; King's Ruler
BIPOLAR JUNCTION-TRANSISTOR
BIPOLAR JUNCTION-TRANSISTOR
BIPOLAR JUNCTION-TRANSISTOR
BIPOLAR JUNCTION-TRANSISTOR
BIPOLAR JUNCTION-TRANSISTOR
v. t.
To give sanction to; to ratify; to confirm; to approve.
n.
A quantity so connected with another quantity, that if any alteration be made in the latter there will be a consequent alteration in the former. Each quantity is said to be a function of the other. Thus, the circumference of a circle is a function of the diameter. If x be a symbol to which different numerical values can be assigned, such expressions as x2, 3x, Log. x, and Sin. x, are all functions of x.
n.
The act of joining, or the state of being joined; union; combination; coalition; as, the junction of two armies or detachments; the junction of paths.
n.
The place or point of union, meeting, or junction; specifically, the place where two or more lines of railway meet or cross.
a.
Of or pertaining to one of the poles of the earth, or of a sphere; situated near, or proceeding from, one of the poles; as, polar regions; polar seas; polar winds.
n.
The office, duties, or functions of a minister, servant, or agent; ecclesiastical, executive, or ambassadorial function or profession.
n.
Junction; adaptation
n.
Bipolar quality.
n.
The act of anointing, smearing, or rubbing with an unguent, oil, or ointment, especially for medical purposes, or as a symbol of consecration; as, mercurial unction.
n.
The appropriate action of any special organ or part of an animal or vegetable organism; as, the function of the heart or the limbs; the function of leaves, sap, roots, etc.; life is the sum of the functions of the various organs and parts of the body.
n.
The things sold by auction or put up to auction.
a.
Doubly polar; having two poles; as, a bipolar cell or corpuscle.
v. t.
To sell by auction.
v. t.
The act of uniting, or the state of being united; junction.
n.
The right line drawn through the two points of contact of the two tangents drawn from a given point to a given conic section. The given point is called the pole of the line. If the given point lies within the curve so that the two tangents become imaginary, there is still a real polar line which does not meet the curve, but which possesses other properties of the polar. Thus the focus and directrix are pole and polar. There are also poles and polar curves to curves of higher degree than the second, and poles and polar planes to surfaces of the second degree.
a.
Two-threaded; involving the use of two threads; as, bifilar suspension; a bifilar balance.
n.
The act of anointing, or the state of being anointed; unction; specifically (Med.), the rubbing of ointments into the pores of the skin, by which medicinal agents contained in them, such as mercury, iodide of potash, etc., are absorbed.
a.
Pertaining to, reckoned from, or having a common radiating point; as, polar coordinates.
v. t.
To supply with an organ or organs having a special function or functions.
a.
Pertaining to the function of an organ or part, or to the functions in general.