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Type of bipolar junction transistor
The germanium alloy-junction transistor, or alloy transistor, was an early type of bipolar junction transistor, developed at General Electric and RCA in
Alloy-junction_transistor
Type of transistor
alloy-junction and grown junction processes for making bipolar junction transistors (BJTs). Bell Labs developed the first prototype diffused junction
Diffused_junction_transistor
Transistor that uses both electrons and holes as charge carriers
junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor,
Bipolar_junction_transistor
Transistor with four active terminals
point-contact transistor and the later grown-junction transistor and alloy-junction transistor. Both offered much higher speed than earlier transistors. Point-contact
Tetrode_transistor
Primitive type of bipolar junction transistor
The grown-junction transistor was the first type of bipolar junction transistor made. It was invented by William Shockley at Bell Labs on June 23, 1948
Grown-junction_transistor
Solid-state electrically operated switch also used as an amplifier
field-effect transistor, or may have two kinds of charge carriers in bipolar junction transistor devices. Compared with the vacuum tube, transistors are generally
Transistor
Topics referred to by the same term
Junction transistor usually means bipolar junction transistor. It may also refer to: Grown-junction transistor Alloy-junction transistor Unijunction transistor
Junction transistor (disambiguation)
Junction_transistor_(disambiguation)
Type of transistor developed by Philco in 1953
The surface-barrier transistor is a type of transistor developed by Philco in 1953 as an improvement to the alloy-junction transistor and the earlier point-contact
Surface-barrier_transistor
Semiconductor–semiconductor junction
{\displaystyle \mathbf {J} _{R}} ) Field current Generation current Alloy-junction transistor Capacitance–voltage profiling Deep-level transient spectroscopy
P–n_junction
Type of field-effect transistor
The junction field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that
JFET
Multi-transistor electronics configuration
bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified
Darlington_transistor
Type of solid state switch
vertical PNP bipolar junction transistor. This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel
Insulated-gate bipolar transistor
Insulated-gate_bipolar_transistor
First successful type of transistor, developed in 1947
point-contact transistors differ from the slightly later junction transistors: The common base current gain (or α) of a point-contact transistor is usually
Point-contact_transistor
Form of transistor that emits light
A light-emitting transistor or LET is a form of transistor that emits light. Higher efficiency than light-emitting diode (LED) is possible.[citation needed]
Light-emitting_transistor
Bipolar junction transistor operated in the avalanche breakdown region
paper dealing with avalanche transistors was Ebers & Miller (1955). The paper describes how to use alloy-junction transistors in the avalanche breakdown
Avalanche_transistor
Diode that emits light from an organic compound
sequentially, one by one Active-matrix (AMOLED) that uses a thin-film transistor (TFT) backplane to directly access and switch each individual pixel on
OLED
inventions in history. Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). The principle
History_of_the_transistor
Early germanium alloy-junction PNP transistor
The 2N107 is an early germanium alloy-junction PNP transistor developed by General Electric (GE) in 1955, and was GE's entry into the electronic hobbyist
2N107
Semiconductor light source
discovery of radiative recombination in aluminum gallium nitride (AlGaN) alloys by U.S. Army Research Laboratory (ARL) led to the conceptualization of UV
Light-emitting_diode
Class of digital circuits
IBM manufactured transistors by modifying off-the-shelf germanium diodes, after which they had their own alloy-junction transistor manufacturing plant
Diode–transistor_logic
was a type of transistor developed in the 1950s as an improvement over the point-contact transistor and the later alloy-junction transistor. It offered
Spacistor
Experimental transistor
1952 published first investigations of a transistor containing the basic elements of the TFET, a gated p-n junction. The reported surface conductivity control
Tunnel field-effect transistor
Tunnel_field-effect_transistor
Type of field-effect transistor
An organic field-effect transistor (OFET) is a field-effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum
Organic field-effect transistor
Organic_field-effect_transistor
Magnetic effect in insulators between ferromagnets
magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by
Tunnel_magnetoresistance
Type of field-effect transistor
Si/SiGe. The advantages of HEMTs over other transistor architectures, like the bipolar junction transistor and the MOSFET, are the higher operating temperatures
High-electron-mobility transistor
High-electron-mobility_transistor
Transistor using different semiconductor materials
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and
Heterojunction bipolar transistor
Heterojunction_bipolar_transistor
Type of transistor
A unijunction transistor (UJT) is a three-lead electronic semiconductor device with only one junction. It acts exclusively as an electrically controlled
Unijunction_transistor
Type of transistor
transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET
Field-effect_transistor
Central computer component that executes instructions
continued to build processors out of bipolar transistor–transistor logic (TTL) chips because bipolar junction transistors were faster than MOS chips up until the
Central_processing_unit
Type of field-effect transistor
A ChemFET is a chemically-sensitive field-effect transistor, that is a field-effect transistor used as a sensor for measuring chemical concentrations
Chemical field-effect transistor
Chemical_field-effect_transistor
Device that prevents a transistor from saturating
Schottky-clamped transistor. Standard transistor–transistor logic (TTL) uses transistors as saturated switches. A saturated transistor is turned on hard
Schottky_transistor
Type of non-planar transistor
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the
Fin_field-effect_transistor
Pictogram used to represent various electrical and electronic devices or functions
junction transistor (BJT) PNP bipolar junction transistor (BJT) NPN Darlington transistor PNP Darlington transistor NPN Phototransistor N-channel junction gate
Electronic_symbol
Type of field-effect transistor
metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated
MOSFET
Type of field-effect transistor
A ferroelectric field-effect transistor (Fe FET) is a type of field-effect transistor that includes a ferroelectric material sandwiched between the gate
Fe_FET
Transistor with 5 active terminals
A pentode transistor is any transistor having five active terminals. One early pentode transistor was developed in the early 1950s as an improvement over
Pentode_transistor
Type of transistor
The organic electrochemical transistor (OECT) is an organic electronic device which functions like a transistor. The current flowing through the device
Organic electrochemical transistor
Organic_electrochemical_transistor
Type of field-effect transistor
field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a
MESFET
Device that controls current between electrodes
pentode tube, although usually using much lower voltages, is the junction field-effect transistor (JFET). Vacuum tubes are commonly described using characteristic
Vacuum_tube
Electronic component that exploits the electronic properties of semiconductor materials
The field may be applied by a reverse-biased p–n junction, forming a junction field-effect transistor (JFET) or by an electrode insulated from the bulk
Semiconductor_device
Type of diode
experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current concentration and
Avalanche_diode
Two-terminal electronic component
Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential current–voltage
Diode
Family of digital circuits
the area of a bipolar junction transistor. The main reason is that the MOSFET is self-insulating and does not require p–n junction isolation from neighboring
PMOS_logic
Vacuum tube used to display images
electromechanical meter, which later came to be used on higher-end tuners when transistor sets lacked the high voltage required to drive the device. The same type
Cathode_ray_tube
Four-layer solid-state current-controlling device
anode and cathode momentarily with a push-button switch or transistor across the junction. When a negative voltage is applied to the anode and a positive
Silicon_controlled_rectifier
Discrete device in an electronic system
transistor) Composite transistors BiCMOS (bipolar CMOS) IGBT (Insulated-gate bipolar transistor) Other transistors Bipolar junction transistor (BJT
Electronic_component
Converts light into current
Any p–n junction, if illuminated, is potentially a photodiode. Semiconductor devices such as diodes, transistors and ICs contain p–n junctions, and will
Photodiode
Electronic circuits that utilize digital signals
invented the point-contact transistor at Bell Labs in 1947, followed by William Shockley inventing the bipolar junction transistor at Bell Labs in 1948. At
Digital_electronics
First transistorized computer in the USA
Phase One computer, Flyable TRADIC, Leprechaun (using germanium alloy junction transistors in 1956) and XMH-3 TRADIC. TRADIC Phase One was developed to explore
TRADIC
MOS field-effect transistor with more than one gate
field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The
Multigate_device
System designed to maintain a constant voltage
used with the base of the regulating transistor connected directly to the voltage reference: A simple transistor regulator will provide a relatively constant
Voltage_regulator
DC-DC voltage step-down power converter
semiconductors (a diode and a transistor, although modern buck converters frequently replace the diode with a second transistor used for synchronous rectification)
Buck_converter
Power semiconductor electronic device
applications. Thyristor Gate turn-off thyristor Insulated-gate bipolar transistor Hingorani, Narain G; Laszlo Gyugi (2011). Understanding FACTS. India:
Integrated gate-commutated thyristor
Integrated_gate-commutated_thyristor
An oxide thin-film transistor (oxide TFT) or metal oxide thin film transistor is a type of thin film transistor where the semiconductor is a metal oxide
Oxide_thin-film_transistor
Potential transistor-like device
sensitive transistor, also known as the spin transistor, spin field-effect transistor (spinFET), Datta–Das spin transistor or spintronic transistor (named
Spin_transistor
Connector used to connect to mains power
transistor (OECT) Spacistor Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction
AC_power_plugs_and_sockets
Electronic component
reliable low-voltage support capacitor to complement their newly invented transistor. With the development of plastic materials by organic chemists during
Capacitor
Electronic device
transistor (SET) is a sensitive electronic device based on the Coulomb blockade effect. In this device the electrons flow through a tunnel junction between
Single-electron_transistor
Type of voltage regulator
output transistor. The shunt regulator works by providing a path from the supply voltage to ground through a variable resistance (the main transistor is in
Linear_regulator
Field-effect transistor device
A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is made by thin-film deposition. TFTs are grown on
Thin-film_transistor
Double-diffused MOSFET
field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often
LDMOS
Type of junction-gate field effect transistor
The static induction transistor (SIT) is a type of field-effect transistor (FET) capable of high-speed and high-power operation, with low distortion and
Static_induction_transistor
Electrostatic discharge (ESD) protection device
connected to the I/O pad under protection. A parasitic NPN bipolar junction transistor (BJT) is thus formed with the drain (n-type) acting as the collector
GgNMOS
Solid-state photodetector
mechanisms and structural defects in early silicon and germanium transistor and p–n junction devices. These defects were called 'microplasmas' and are critical
Single-photon_avalanche_diode
Array of logic gates that are reprogrammable
cores exist alongside the programmable fabric, but they are built out of transistors instead of LUTs so they have ASIC-level performance and power consumption
Field-programmable_gate_array
Solar power cell with multiple band gaps from different materials
the high band gap alloy. This alloy range provides for the ability to have band gaps in the range 1.92–1.87 eV. The lower GaAs junction has a band gap of
Multi-junction_solar_cell
Type of resistive heater
transistor (OECT) Spacistor Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction
Self-regulating_heater
Technology for constructing integrated circuits
/ˈsiːmɒs/ SEE-moss) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs
CMOS
Theoretical transistor
A nanoscale vacuum-channel transistor (NVCT) is a transistor in which the electron transport medium is a vacuum, much like a vacuum tube. In a traditional
Nanoscale vacuum-channel transistor
Nanoscale_vacuum-channel_transistor
Late vacuum tube design designed to compete with transistors
bipolar junction transistors, and were much smaller than conventional tubes of the day, almost approaching the compactness of early discrete transistor casings
Nuvistor
Electronic circuit formed on a small, flat piece of semiconductor material
creation of high-density ICs. Unlike bipolar transistors, which required additional steps for p–n junction isolation, MOSFETs could be easily isolated
Integrated_circuit
Power amplifier
and produces a high-current drive input for the gate of a high-power transistor such as an IGBT or power MOSFET. Gate drivers can be provided either on-chip
Gate_driver
the Heterojunction bipolar transistor (HBT) is that the emitter–base interface is the same as in a bipolar junction transistor (BJT) with the blocking energy
Heterostructure-emitter bipolar transistor
Heterostructure-emitter_bipolar_transistor
Semiconductor diode
employed as Baker clamps in parallel with the collector-base junctions of the bipolar transistors to prevent their saturation, thereby greatly reducing their
Schottky_diode
A synaptic transistor is an electrical device that can learn in ways similar to a neural synapse. It optimizes its own properties for the functions it
Synaptic_transistor
The ballistic collection transistor is the bipolar transistor exhibiting a ballistic conduction resulting in significant velocity overshoot. Initial demonstration
Ballistic collection transistor
Ballistic_collection_transistor
Form of digital logic family in integrated circuits
field-effect transistors) to implement logic gates and other digital circuits. NMOS transistors operate by creating an inversion layer in a p-type transistor body
NMOS_logic
The inverted-T field-effect transistor (ITFET) is a type of field effect transistor invented by Leo Mathew at Freescale Semiconductor. Part of the device
ITFET
Ballistic deflection transistors (BDTs) are electronic devices, developed since 2006, for high-speed integrated circuits, which is a set of circuits bounded
Ballistic deflection transistor
Ballistic_deflection_transistor
gate is connected to the telecom circuit's power supply (via a diode or transistor), causing the device to activate if the transient voltage exceeds the
Trisil
Integrated circuit customized for a specific task
introduced the Micromatrix family of bipolar diode–transistor logic (DTL) and transistor–transistor logic (TTL) arrays. Complementary metal–oxide–semiconductor
Application-specific integrated circuit
Application-specific_integrated_circuit
A DNA field-effect transistor (DNAFET) is a field-effect transistor which uses the field-effect due to the partial charges of DNA molecules to function
DNA_field-effect_transistor
Junction-Less nanowire transistor (JLNT) is a type of Field-effect transistor (FET) in which the channel consists of one or more nanowires and does not
Junctionless nanowire transistor
Junctionless_nanowire_transistor
Semiconductor device
development of the GTO, and insulated-gate bipolar transistors (IGBT), which are members of the transistor family. They are also used in the starter circuits
Gate_turn-off_thyristor
Electronic device/component that increases the strength of a signal
the bipolar junction transistor (BJT) in 1948. They were followed by the invention of the metal–oxide–semiconductor field-effect transistor (MOSFET) by
Amplifier
DC linear voltage regulator
{R_{1}}{R_{2}}}\right)V_{\text{ref}}\ .} If a bipolar transistor is used, as opposed to a field-effect transistor or JFET, significant additional power may be
Low-dropout_regulator
Diode that allows current to flow in the reverse direction at a specific voltage
connected in series with a forward-biased silicon diode (or a transistor B–E junction) manufactured on the same chip. The forward-biased diode has a
Zener_diode
Nonlinear two-terminal fundamental circuit element
fundamentally from that of a metal oxide semiconductor transistor, which is capacitor-based. Unlike the transistor, the final state of the memristor in terms of
Memristor
Electronic oscillator circuit
transistor (OECT) Spacistor Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction
Crystal_oscillator
Form of digital logic family in integrated circuits
in the 1970s. In the late 1960s, bipolar junction transistors were faster than (p-channel) MOS transistors then used and were more reliable, but they
Depletion-load_NMOS_logic
Type of display device
transistor (OECT) Spacistor Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction
Quantum_dot_display
Type of magnetometer
magnetic fields, based on superconducting loops containing Josephson junctions. SQUIDs are sensitive enough to measure magnetic fields as low as 5×10−18
SQUID
Type of solid-state switch
a combination of Greek language θύρα, meaning "door" or "valve", and transistor) is a solid-state semiconductor device which can be thought of as a highly
Thyristor
transistor (OECT) Spacistor Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction
List_of_RF_connector_types
Semiconductor device with variable capacitance
transistor (OECT) Spacistor Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction
Heterostructure barrier varactor
Heterostructure_barrier_varactor
Two-terminal electronic component that limits current to a specified maximum
transistor (OECT) Spacistor Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction
Constant-current_diode
Type of DC-to-DC converter
output voltage is adjustable based on the duty cycle of the switching transistor. One possible drawback of this converter is that the switch does not have
Buck–boost_converter
Electronic component
transistor (OECT) Spacistor Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction
Transient-voltage-suppression diode
Transient-voltage-suppression_diode
Passive electronic component providing electrical resistance
otherwise disconnected (such as when a button is not pushed down or a transistor is not active). A pull-up resistor connects the circuit to a high positive
Resistor
Electrical device that converts AC to DC
in conjunction with at least one voltage amplifying component like a transistor to maintain output voltage when source voltage drops. The input filter
Rectifier
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ALLOY JUNCTION-TRANSISTOR
ALLOY JUNCTION-TRANSISTOR
ALLOY JUNCTION-TRANSISTOR
ALLOY JUNCTION-TRANSISTOR
ALLOY JUNCTION-TRANSISTOR
ALLOY JUNCTION-TRANSISTOR
ALLOY JUNCTION-TRANSISTOR
ALLOY JUNCTION-TRANSISTOR
ALLOY JUNCTION-TRANSISTOR
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