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Early type of semiconductor rectifier
A metal rectifier is an early type of semiconductor rectifier in which the semiconductor is copper oxide, germanium or selenium. They were used in power
Metal_rectifier
Electrical device that converts AC to DC
A rectifier is an electrical device that converts alternating current (AC), which periodically reverses direction, to direct current (DC), which flows
Rectifier
Electronic component that exploits the electronic properties of semiconductor materials
in part for its "metal" gate, in modern devices polysilicon is typically used instead. Two-terminal devices: DIAC Diode (rectifier diode) Gunn diode
Semiconductor_device
Four-layer solid-state current-controlling device
rectifier or semiconductor controlled rectifier (SCR) is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier"
Silicon_controlled_rectifier
Type of electrical rectifier with a liquid cathode
A mercury-arc valve or mercury-vapor rectifier or (UK) mercury-arc rectifier is a type of electrical rectifier used for converting high-voltage or high-current
Mercury-arc_valve
Type of power rectifier
A selenium rectifier is a type of metal rectifier, invented in 1933. They were used in power supplies for electronic equipment and in high-current battery-charger
Selenium_rectifier
Technology for constructing integrated circuits
Complementary metal–oxide–semiconductor (CMOS /ˈsiːmɒs/ SEE-moss) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process
CMOS
Semiconductor light source
allowing them to work efficiently with mains voltages. Often a simple rectifier and capacitive current limiting are employed to create a low-cost replacement
Light-emitting_diode
Semiconductor diode
cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky
Schottky_diode
Electronic component
varistors were constructed by connecting two rectifiers, such as the copper-oxide or germanium-oxide rectifier in antiparallel configuration. At low voltage
Varistor
Diode that emits light from an organic compound
electroluminescent material after the first two layers, after which ITO or metal may be applied again as a cathode. Later, the entire stack of materials
OLED
Pictogram used to represent various electrical and electronic devices or functions
bridge rectifier symbol. Some simplified symbols do not show the internal diodes. Bridge rectifier Bridge rectifier Bridge rectifier Bridge rectifier Three-phase
Electronic_symbol
Type of field-effect transistor
In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor
MOSFET
Discrete device in an electronic system
transistor having four active terminals. Thyristors Silicon-controlled rectifier (SCR) – passes current only after triggered by a sufficient control voltage
Electronic_component
Solid-state electrically operated switch also used as an amplifier
Physics for their achievement. The most widely used type of transistor, the metal–oxide–semiconductor field-effect transistor (MOSFET), was invented at Bell
Transistor
Type of display device
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
Quantum_dot_display
Two-terminal electronic component
(such as selenium rectifiers) that were available at that time. In 1873, Frederick Guthrie observed that a grounded, white-hot metal ball brought close
Diode
Devices that measure magnetic field strength using the Hall effect
fixed DC bias current is applied along one axis across a thin strip of metal called the Hall element transducer. Sensing electrodes on opposite sides
Hall_effect_sensor
Type of resistor, usually with three terminals
used include resistance wire, carbon particles in plastic, and a ceramic/metal mixture called cermet. Conductive track potentiometers use conductive polymer
Potentiometer
Type of resistor whose resistance varies with temperature
as resettable fuses. Thermistors are generally produced using powdered metal oxides. With formulas and techniques vastly improving over the past 20 years
Thermistor
Line of guitar amplifiers made by Mesa/Boogie
success led to Mesa/Boogie releasing an extensive line of Rectifier-branded amps. Hard rock and metal guitarists increasingly sought heavier tones throughout
Mesa/Boogie_Rectifier
Type of solid-state switch
control-gate signal on newer types. Some sources define "silicon-controlled rectifier" (SCR) and "thyristor" as synonymous. Other sources define thyristors
Thyristor
Solar cell that can produce electrical energy from each side of the cell
VNIIT-KVANT spaceship-borne prototypes were based on tiny cells without surface metal grid and therefore intricately interconnected, more in the style of microelectronic
Bifacial_solar_cells
Type of magnetometer
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
SQUID
Practical physics application
contains a thermally conductive metal layer. High-power LEDs are packaged in large-area ceramic packages that attach to a metal heat sink using thermal grease
Light-emitting_diode_physics
Type of solid state switch
S.; Gray, P. V.; Love, R. P.; Zommer, N. (1982). "The insulated gate rectifier (IGR): A new power switching device". 1982 International Electron Devices
Insulated-gate bipolar transistor
Insulated-gate_bipolar_transistor
Array of logic gates that are reprogrammable
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
Field-programmable_gate_array
System designed to maintain a constant voltage
voltage would reverse. An alternator accomplishes the same goal using rectifiers. Modern designs now use solid-state technology to perform the same function
Voltage_regulator
Integrated circuit customized for a specific task
7400 series or the 4000 series. ASIC chips are typically fabricated using metal–oxide–semiconductor (MOS) technology, as MOS integrated circuit chips. As
Application-specific integrated circuit
Application-specific_integrated_circuit
Device for producing coherent EM waves in the sub-visible spectrum
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
Maser
First successful type of transistor, developed in 1947
the market. While point-contact transistors usually worked fine when the metal contacts were simply placed close together on the germanium base crystal
Point-contact_transistor
Diode that allows current to flow in the reverse direction at a specific voltage
destruction of the Zener junction by overheating it and causing migration of metallization across the junction ("spiking") can be used intentionally as a 'Zener
Zener_diode
Type of transistor
ISBN 978-1-56677-130-6. Lillian Hoddeson (1994). "Research on crystal rectifiers during World War II and the invention of the transistor". History and
Field-effect_transistor
Electronic component
unidirectional or bidirectional. A unidirectional device operates as a rectifier in the forward direction like any other avalanche diode, but is made and
Transient-voltage-suppression diode
Transient-voltage-suppression_diode
be possible to make metal–insulator–metal rectifiers with much smaller spreading resistances than metal–semiconductor rectifiers have, consequently giving
Metal–insulator–metal_diode
Transistor that uses both electrons and holes as charge carriers
the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type
Bipolar_junction_transistor
Central computer component that executes instructions
which are chips with a hundred or more gates, was to build them using a metal–oxide–semiconductor (MOS) semiconductor manufacturing process (either PMOS
Central_processing_unit
Electronic numeric display device
of a wire mesh, not to be confused with a control grid), and shaped bare metal cathodes. Nixie tubes were invented by David Hagelbarger. The early Nixie
Nixie_tube
DC-to-DC power converter with an output voltage greater than its input voltage
can come from any suitable DC source, such as batteries, solar panels, rectifiers, and DC generators. A process that changes one DC voltage to a different
Boost_converter
Electrical safety device that provides overcurrent protection
overcurrent protection of an electrical circuit. Its essential component is a metal wire or strip that melts when too much current flows through it, thereby
Fuse_(electrical)
Connector used to connect to mains power
to the 240 V AC mains until circa 1969, and thereafter from in-house rectifiers. They were also used in the Ministry of Defence Main Building inside circuits
AC_power_plugs_and_sockets
Electronic circuit formed on a small, flat piece of semiconductor material
emitter-coupled logic (ECL). Modern integrated circuits (ICs) are based on the metal–oxide–semiconductor field-effect transistor (MOSFET), forming MOS ICs. The
Integrated_circuit
Vacuum tube used to display images
beam current and vice versa respectively. The high voltage regulator and rectifier vacuum tubes in some old CRT TV sets may also emit x-rays. The electron
Cathode_ray_tube
DC-DC voltage step-down power converter
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
Buck_converter
Converts light into current
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
Photodiode
Device that controls current between electrodes
functions. High-power rectifiers use mercury vapor to achieve a lower forward voltage drop than high-vacuum tubes. Early tubes used a metal or glass envelope
Vacuum_tube
Electrical device
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
Single-ended primary-inductor converter
Single-ended_primary-inductor_converter
Single-grid amplifying vacuum tube having three active electrodes
cathode electrode heated by a filament, which releases electrons, and a flat metal plate electrode (anode) to which the electrons are attracted, with a grid
Triode
Passive electronic component providing electrical resistance
resistor today is the metal-film resistor. Metal Electrode Leadless Face (MELF) resistors often use the same technology. Metal film resistors are usually
Resistor
Device for generating microwaves
past a series of cavity resonators, which are small, open cavities in a metal block. Electrons pass by the cavities and cause microwaves to oscillate
Cavity_magnetron
Electronic circuits that utilize digital signals
surface devices". IRE-AIEE Solid State Device Research Conference. "1960 – Metal Oxide Semiconductor (MOS) Transistor Demonstrated". The Silicon Engine.
Digital_electronics
DC linear voltage regulator
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
Low-dropout_regulator
Type of field-effect transistor
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
JFET
Vacuum tube used for amplifying radio waves
beam interacts with radio waves as it passes through resonant cavities, metal boxes along the length of a tube. The electron beam first passes through
Klystron
Electronic component
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
Resettable_fuse
Type of DC-to-DC converter
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
Buck–boost_converter
MOSFET that can handle significant power levels
along with Tom Herman. The HexFET was commercialized by International Rectifier in 1978. The insulated-gate bipolar transistor (IGBT), which combines
Power_MOSFET
Form of digital logic family in integrated circuits
NMOS or nMOS logic (from N-type metal–oxide–semiconductor) uses n-type (-) MOSFETs (metal–oxide–semiconductor field-effect transistors) to implement logic
NMOS_logic
Electronic component
blowing a fuse or causing failure of rectifier diodes. For example, in older equipment, this may cause arcing in rectifier tubes. They can be restored before
Capacitor
Type of vacuum tube; early radio detector
the opposite direction. The thermionic diode was later widely used as a rectifier — a device that converts alternating current (AC) into direct current
Fleming_valve
Part of a Geiger counter
potential difference of several hundred volts. The walls of the tube are either metal or have their inside surface coated with a conducting material or a spiral
Geiger–Müller_tube
Type of field-effect transistor
in Japan. The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching
High-electron-mobility transistor
High-electron-mobility_transistor
Electronic oscillator circuit
especially low content of aluminium, alkali metal and other impurities and minimal defects; the low amount of alkali metals provides increased resistance to ionizing
Crystal_oscillator
Temperature control system
energy supply. Warren S. Johnson (1847–1911), of Wisconsin, patented a bi-metal room thermostat in 1883, and two years later sought a patent for the first
Thermostat
Sensors of light or other electromagnetic energy
Photodetector: A metal-semiconductor-metal (MSM) photodetector consists of a semiconductor layer sandwiched between two metal electrodes. The metal electrodes
Photodetector
Micro-electronic component
optimized for the common case. SoC chips are typically fabricated using metal–oxide–semiconductor (MOS) technology. The netlists described above are used
System_on_a_chip
Light dependent resistor
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
Photoresistor
Type of diode
Popular makeshift varicaps include LEDs, 1N400X series rectifier diodes, Schottky rectifiers and various transistors used with their collector-base junctions
Varicap
Microwave signal amplifier
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
Traveling-wave_tube
Method for producing electronic circuits
Saturn V vehicles. Components were mechanically redesigned to have small metal tabs or end caps that could be directly soldered to the surface of the PCB
Surface-mount_technology
Electrical component that can break an electrical circuit
exchanges. In the simplest case, a switch has two conductive pieces, often metal, called contacts, connected to an external circuit, that touch to complete
Switch
Fast, high sensitivity, low noise electronic photon detector
using visible light striking alkali metals (potassium and sodium). The addition of caesium, another alkali metal, has permitted the range of sensitive
Photomultiplier_tube
Magnetic core on which the windings of electric transformers and inductors are formed
for AM radio receivers. Ferrites are ceramic compounds of the transition metals with oxygen, which are ferrimagnetic but non-conductive. Ferrites that are
Ferrite_core
Electronic device/component that increases the strength of a signal
function include:[citation needed] a device like a silicon controlled rectifier or a transistor used as a switch may be employed to turn either fully
Amplifier
Type of voltage regulator
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
Linear_regulator
Microchip manipulating light instead of electricity
combines high density photonic integrated circuits (PICs) with complementary metal oxide semiconductor (CMOS) electronics fabrication. The most technologically
Photonic_integrated_circuit
Form of transistor that emits light
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
Light-emitting_transistor
Type of non-planar transistor
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where
Fin_field-effect_transistor
Magnetic effect in insulators between ferromagnets
Materials that come into consideration for this are called ferromagnetic half-metals. Their conduction electrons are fully spin-polarized. This property is theoretically
Tunnel_magnetoresistance
Electronic detecting or amplifying vacuum tube
oxygen and water vapor. He then applied the same approach to producing a rectifier for the newly developed "Coolidge" X-ray tubes. Again contrary to what
Audion
Nonlinear two-terminal fundamental circuit element
the impact of concentration polarization effects on the behavior of metal−TiO2−x−metal structures under voltage or current stress was not considered. In
Memristor
Electrical connector designed to work at radio frequencies
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
RF_connector
sell them... At that time the important device was the high back voltage rectifier". Shockley's research team initially attempted to build a field-effect
History_of_the_transistor
Semiconductor laser
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
Laser_diode
Part of computer memory
the most common memory cell architecture is MOS memory, which consists of metal–oxide–semiconductor (MOS) memory cells. Modern random-access memory (RAM)
Memory_cell_(computing)
Assembly of electrodes at either end of an insulated tube filled with gas
cathode rectifier with anode current controlled by magnetic field Phanotron, a rectifier Plomatron, a grid-controlled mercury-arc rectifier Strobotron
Gas-filled_tube
MOS field-effect transistor with more than one gate
multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than
Multigate_device
Type of field-effect transistor
MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor)
MESFET
Type of MOSFET where the gate is electrically isolated
floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically
Floating-gate_MOSFET
Field-effect transistor device
non-conducting) substrate, such as glass. This differs from the conventional bulk metal-oxide-semiconductor field-effect transistor (MOSFET), where the semiconductor
Thin-film_transistor
Optical diode invented by Jun-Ichi Nishizawa
p–n diode. The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes it suitable for attenuators
PIN_diode
Multi-transistor electronics configuration
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
Darlington_transistor
Electronic device
single transition). When the applied voltage is zero, the Fermi level at the metal electrodes will be inside the energy gap. When the voltage increases to
Single-electron_transistor
Vacuum tube which generates high-frequency radio waves
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
Gyrotron
Electrostatic discharge (ESD) protection device
Selenium rectifier Fast diode Single-photon avalanche diode (SPAD) Constant-current diode (CLD, CRD) Gunn diode Varicap IMPATT diode Metal–insulator–metal diode
GgNMOS
Device used in television cameras
generate an electrical signal by projecting an image onto a selenium-coated metal plate that was simultaneously scanned by a cathode ray beam. These experiments
Video_camera_tube
Experimental transistor
experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor field-effect transistor (MOSFET), the fundamental switching
Tunnel field-effect transistor
Tunnel_field-effect_transistor
Light source based on gas discharge
current glow discharge. Higher power devices, such as mercury-vapor lamps or metal halide lamps use a higher current arc discharge. Low pressure sodium-vapor
Neon_lamp
Type of semiconductor laser diode
interim testing process will flag that the top metal layer is not making contact to the initial metal layer. Additionally, because VCSELs emit the beam
Vertical-cavity surface-emitting laser
Vertical-cavity_surface-emitting_laser
Power amplifier
over discretely-implemented gate-drive solutions. In 1989, International Rectifier (IR) introduced the first monolithic HVIC gate driver product, the high-voltage
Gate_driver
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