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Four-layer solid-state current-controlling device
A silicon controlled rectifier or semiconductor controlled rectifier (SCR) is a four-layer solid-state current-controlling device. The name "silicon controlled
Silicon_controlled_rectifier
Type of solid-state switch
some other means), or through the control-gate signal on newer types. Some sources define "silicon-controlled rectifier" (SCR) and "thyristor" as synonymous
Thyristor
Electrical device that converts AC to DC
copper and selenium oxide plates, semiconductor diodes, silicon-controlled rectifiers and other silicon-based semiconductor switches. Historically, even synchronous
Rectifier
Type of electrical rectifier with a liquid cathode
A mercury-arc valve or mercury-vapor rectifier or (UK) mercury-arc rectifier is a type of electrical rectifier used for converting high-voltage or high-current
Mercury-arc_valve
Two-terminal electronic component
sequence developed by Mullard, a UK company Rectifier Transistor Thyristor or silicon controlled rectifier (SCR) TRIAC DIAC Varistor In optics, an equivalent
Diode
Solid-state electrically operated switch also used as an amplifier
the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of field-effect transistor that is fabricated by the controlled oxidation of a semiconductor
Transistor
Early type of semiconductor rectifier
inexpensive high voltage silicon rectifiers, this technology has fallen into disuse. Metal rectifiers have been replaced by silicon diodes in most devices
Metal_rectifier
Semiconductor light source
allowing them to work efficiently with mains voltages. Often a simple rectifier and capacitive current limiting are employed to create a low-cost replacement
Light-emitting_diode
Pictogram used to represent various electrical and electronic devices or functions
Emitting Diode) Photodiode Tunnel diode Varicap Shockley diode SCR (Silicon Controlled Rectifier) Diac (may be a varistor in older schematics) Constant-current
Electronic_symbol
Solid-state semiconductor device
small voltage and current can control a much larger voltage and current) and are related to silicon controlled rectifiers (SCRs). TRIACs differ from SCRs
TRIAC
Thyristor power controllers or silicon controlled rectifier power controllers (SCR power controllers) control power or voltage supplied to a load. Typical
Thyristor_power_controller
Gas-filled tube used as a rectifier
An ignitron is a type of gas-filled tube used as a controlled rectifier and switch dating from the 1930s. Invented by Joseph Slepian while employed by
Ignitron
Type of diode
In electronics, an avalanche diode is a diode (made from silicon or other semiconductor) that is designed to experience avalanche breakdown at a specified
Avalanche_diode
Electronic component that exploits the electronic properties of semiconductor materials
Field-effect transistor Insulated-gate bipolar transistor (IGBT) Silicon-controlled rectifier Thyristor TRIAC Unijunction transistor Four-terminal devices:
Semiconductor_device
Discrete device in an electronic system
active terminals. Thyristors Silicon-controlled rectifier (SCR) – passes current only after triggered by a sufficient control voltage on its gate TRIAC (TRIode
Electronic_component
Type of transistor
kilohertz). It is widely used in the triggering circuits for silicon controlled rectifiers. In the 1960s, the low cost per unit, combined with its unique
Unijunction_transistor
Diode that emits light from an organic compound
display matrix can have various control schemes: A passive-matrix (PMOLED) where each row and line in the display is controlled sequentially, one by one Active-matrix
OLED
Gas-filled tube, electrical switch, rectifier
type of gas-filled tube used as a high-power electrical switch and controlled rectifier. Thyratrons can handle much greater currents than similar hard-vacuum
Thyratron
Type of field-effect transistor
field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines
MOSFET
Temperature control system
are often broadly classified as thermostatically controlled loads (TCLs). Thermostatically controlled loads comprise roughly 50% of the overall electricity
Thermostat
Electronic oscillator circuit
crystal oscillator OCVCXO — oven-controlled voltage-controlled crystal oscillator OCXO — oven-controlled crystal oscillator RbXO — rubidium crystal
Crystal_oscillator
Power semiconductor through-hole package
components include discrete semiconductors such as transistors and silicon-controlled rectifiers, as well as integrated circuits. The TO-220 package is a "power
TO-220
Semiconductor diode
cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky
Schottky_diode
Diode that allows current to flow in the reverse direction at a specific voltage
in similar ways and both effects are present in diodes of this type. In silicon diodes up to about 5.6 volts, the Zener effect is the predominant effect
Zener_diode
Device that controls current between electrodes
turn-on pulse and full conduction; they behave much like modern silicon-controlled rectifiers, also called thyristors due to their functional similarity to
Vacuum_tube
Multi-transistor electronics configuration
one VBE (about 0.65 V in silicon) higher than a single transistor saturation voltage, which is typically 0.1 - 0.2 V in silicon. For equal collector currents
Darlington_transistor
Highly sensitive semiconductor electronic device
in 1952. However, study of avalanche breakdown, micro-plasma defects in silicon and germanium and the investigation of optical detection using p-n junctions
Avalanche_photodiode
Semiconductor companies by country
Maxscend Microelectronics MetaX Montage Technology Moore Threads National Silicon Industry Group Naura Technology Nexchip OmniVision Group Piotech PNC Process
List of semiconductor companies by country
List_of_semiconductor_companies_by_country
Active electronic circuit controlling the current through a load
1971 control power circuits with no moving parts, instead using a semiconductor device to perform switching—often a silicon-controlled rectifier or triac)
Electronic_switch
Electronic component
sensor can be a photoresistor, a photodiode, a phototransistor, a silicon-controlled rectifier (SCR) or a triac. Since LEDs can sense light in addition to emitting
Opto-isolator
Type of diode
voltage-controlled capacitors. They are commonly used in voltage-controlled oscillators, parametric amplifiers, and frequency multipliers. Voltage-controlled
Varicap
Electronic circuit formed on a small, flat piece of semiconductor material
onto a thin, flat piece ("chip") of semiconductor material, most commonly silicon. Integrated circuits are integral to a wide variety of electronic devices
Integrated_circuit
Electronic component
unidirectional or bidirectional. A unidirectional device operates as a rectifier in the forward direction like any other avalanche diode, but is made and
Transient-voltage-suppression diode
Transient-voltage-suppression_diode
Type of semiconductor
some control over the operating point of the PUT.[unreliable source?] In construction, the programmable transistor is similar to the silicon controlled rectifier
Programmable unijunction transistor
Programmable_unijunction_transistor
Power amplifier
over discretely-implemented gate-drive solutions. In 1989, International Rectifier (IR) introduced the first monolithic HVIC gate driver product, the high-voltage
Gate_driver
Device that prevents a transistor from saturating
voltage drop 0.25 V is much less than a standard silicon diode's 0.6 V. In a standard saturated silicon transistor, the base-to-collector voltage is 0.6 V
Schottky_transistor
Type of vacuum tube; early radio detector
the opposite direction. The thermionic diode was later widely used as a rectifier — a device that converts alternating current (AC) into direct current
Fleming_valve
Electronic switching device
industrial automation settings. In alternating current (AC) circuits, silicon-controlled rectifier (SCR) and triac relays inherently switch off at the points of
Solid-state_relay
Type of diode
as anode and cathode but as A1 and A2 or main terminal MT1 and MT2. A silicon diode for alternating current (SIDAC) is a less commonly used device, electrically
DIAC
Type of semiconductor device failure
common parasitic structure is that of a[clarification needed] silicon controlled rectifier (SCR). Once triggered, an SCR conducts for as long as there is
Parasitic_structure
Sensors of light or other electromagnetic energy
grids. The semiconductor layer is typically made of materials such as silicon (Si), gallium arsenide (GaAs), indium phosphide (InP) or antimony selenide
Photodetector
Electronic component
blowing a fuse or causing failure of rectifier diodes. For example, in older equipment, this may cause arcing in rectifier tubes. They can be restored before
Capacitor
Array of logic gates that are reprogrammable
(three or four) active FPGA dies side by side on a silicon interposer – a single piece of silicon that carries passive interconnect. The multi-die construction
Field-programmable_gate_array
Vacuum tube used to display images
beam current and vice versa respectively. The high voltage regulator and rectifier vacuum tubes in some old CRT TV sets may also emit x-rays. The electron
Cathode_ray_tube
Electronic device/component that increases the strength of a signal
transfer function include:[citation needed] a device like a silicon controlled rectifier or a transistor used as a switch may be employed to turn either
Amplifier
Semiconductor device
fully controllable and can be turned on and off by its gate lead. It was invented by General Electric. Normal thyristors (silicon-controlled rectifiers) are
Gate_turn-off_thyristor
bi-directional diodes that switch AC voltages and trigger TRIACS or silicon-controlled rectifiers (SCRs). Except for a small leakage current, DIACS do not conduct
Quadrac
Form of digital logic family in integrated circuits
the time. The introduction of transistors with gates of polycrystalline silicon (that became the de facto standard from the mid-1970s to early 2000s) was
Depletion-load_NMOS_logic
Connector used to connect to mains power
to the 240 V AC mains until circa 1969, and thereafter from in-house rectifiers. They were also used in the Ministry of Defence Main Building inside circuits
AC_power_plugs_and_sockets
Type of field-effect transistor
as gallium arsenide, indium phosphide, or silicon carbide, and are faster but more expensive than silicon-based JFETs or MOSFETs. Production MESFETs
MESFET
Central computer component that executes instructions
in applications that required low power. Following the development of silicon-gate MOS technology by Federico Faggin at Fairchild Semiconductor in 1968
Central_processing_unit
American technology company
germanium rectifiers in November 1954 and introducing the first silicon-based rectifier in September 1959. The company expanded its development into discrete
International_Rectifier
First successful type of transistor, developed in 1947
transistor did still remain in production until the 1960s, by which time the silicon planar transistor was dominating the market. While point-contact transistors
Point-contact_transistor
Device that changes direct current (DC) to alternating current (AC)
applications, it was the 1957 introduction of the thyristor or silicon-controlled rectifier (SCR) that initiated the transition to solid-state inverter circuits
Power_inverter
Engineering device
dimmer based on a then-new solid state switching device called a silicon controlled rectifier or SCR. This small device allowed the dimmer to be installed
Dimmer
Device measuring ionizing radiation
semiconductor detector is a device that uses a semiconductor (usually silicon or germanium) to measure the effect of incident charged particles or photons
Semiconductor_detector
Type of non-planar transistor
generic name "FinFETs" because the source/drain region forms fins on the silicon surface. The FinFET devices exhibit significantly faster switching times
Fin_field-effect_transistor
Location identifier for a circuit component
Programmable logic controller PU: Pickup RY, RLA: Relay SCR: Silicon-controlled rectifier SUS: Silicon unilateral switch SW: Switch TFT: Thin-film transistor
Reference_designator
Failure mode in MOSFET circuits
the NMOS and the PMOS transistors. This breaks the parasitic silicon-controlled rectifier (SCR) structure between these transistors. Such parts are important
Latch-up
Electronic component
varistors were constructed by connecting two rectifiers, such as the copper-oxide or germanium-oxide rectifier in antiparallel configuration. At low voltage
Varistor
System designed to maintain a constant voltage
regulators. Regulators powered from AC power circuits can use silicon controlled rectifiers (SCRs) as the series device. Whenever the output voltage is
Voltage_regulator
Type of resistor whose resistance varies with temperature
temperature compensation, medical equipment temperature control, and industrial automation, silicon PTC thermistors display a nearly linear positive temperature
Thermistor
varistor (MOV) Organic semiconductor Photodetector Silicon controlled rectifier (SCR) Silicon-controlled switch (SCS) Solaristor Static induction thyristor
List_of_RF_connector_types
Semiconductor device with variable capacitance
varistor (MOV) Organic semiconductor Photodetector Silicon controlled rectifier (SCR) Silicon-controlled switch (SCS) Solaristor Static induction thyristor
Heterostructure barrier varactor
Heterostructure_barrier_varactor
Integrated circuit composed of several vertically stacked chips
more ICs and interconnecting them vertically using, for instance, through-silicon vias (TSVs) or Cu-Cu (copper-copper) connections, so that they behave as
Three-dimensional integrated circuit
Three-dimensional_integrated_circuit
Device used to suppress some phenomenon
forward diode drop. Transient-voltage-suppression diodes are like silicon controlled rectifiers (SCRs) which trigger from overvoltage then clamp like Darlington
Snubber
Form of digital logic family in integrated circuits
gates made of polycrystalline silicon, a technology first developed by Federico Faggin at Fairchild Semiconductor. These silicon gates are still used in most
NMOS_logic
Transistor that uses both electrons and holes as charge carriers
Bipolar transistors can be considered voltage-controlled devices (fundamentally the collector current is controlled by the base–emitter voltage; the base current
Bipolar_junction_transistor
DC-DC voltage step-down power converter
generated by the diode forward-voltage drop, usually approximately 0.7 V for a silicon diode or 0.4 V for a Schottky diode. The diode conduction loss is approximately
Buck_converter
Magnetic core on which the windings of electric transformers and inductors are formed
varistor (MOV) Organic semiconductor Photodetector Silicon controlled rectifier (SCR) Silicon-controlled switch (SCS) Solaristor Static induction thyristor
Ferrite_core
Type of transistor
" Texas Instruments made the first grown-junction silicon transistors in 1954. The diffused silicon mesa transistor was developed at Bell Labs in 1955
Diffused_junction_transistor
Type of high-power semiconductor diode
semiconductor devices. The first IMPATT oscillation was obtained from a simple silicon p–n junction diode biased into a reverse avalanche break down and mounted
IMPATT_diode
Technology of power electronics
is applied and have no external control of the start of conduction. Power devices such as silicon-controlled rectifiers and thyristors (as well as the
Power_electronics
Devices that measure magnetic field strength using the Hall effect
technology was unsuited; it was only with the development of the low-cost silicon chip-based integrated circuit (IC) micro-technology that the Hall-effect
Hall-effect_sensor
Solid-state photodetector
bandgap within the semiconductor. Many materials including silicon, germanium, germanium on silicon and III-V elements such as InGaAs/InP have been used to
Single-photon_avalanche_diode
Early form of computer memory
varistor (MOV) Organic semiconductor Photodetector Silicon controlled rectifier (SCR) Silicon-controlled switch (SCS) Solaristor Static induction thyristor
Williams_tube
Integrated circuit customized for a specific task
reducing manufacturing time) and pre-characterization of what is on the silicon (thus reducing design cycle time). Definition from Foundations of Embedded
Application-specific integrated circuit
Application-specific_integrated_circuit
Metal can semiconductor package for power semiconductors
package used for power semiconductors, including transistors, silicon controlled rectifiers, and, integrated circuits. TO stands for "Transistor Outline"
TO-3
Electric multiple unit railcar
nevertheless still delivered with Ignitron tube rectifiers, which were later replaced with silicon controlled rectifiers. A readily apparent external feature of
Silverliner_IV
Two-terminal electronic component that limits current to a specified maximum
operate properly with either polarity. Wide-bandgap materials such as silicon carbide have been used in production devices to enable high-voltage applications
Constant-current_diode
Field-effect transistor device
polycrystalline silicon were (and still are) used as the semiconductor layer. However, because of the low mobility of amorphous silicon and the large device-to-device
Thin-film_transistor
Electrical connector designed to work at radio frequencies
varistor (MOV) Organic semiconductor Photodetector Silicon controlled rectifier (SCR) Silicon-controlled switch (SCS) Solaristor Static induction thyristor
RF_connector
Topics referred to by the same term
complement control protein (CCP) repeat Signal Corps Radio or Set, Complete, Radio, U.S. Army Signal Corps designation Silicon controlled rectifier, a type
SCR
Capacitor whose capacitance can be changed
reactance, e.g. for impedance matching in antenna tuners. In mechanically controlled variable capacitors, the distance between the plates, or the amount of
Variable_capacitor
Electronic circuits that utilize digital signals
for controlled diffusion", issued 1957-08-13 Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal
Digital_electronics
Type of solar cell based on quantum dot devices
captivating photovoltaic material. It attempts to replace bulk materials such as silicon, copper indium gallium selenide (CIGS) or cadmium telluride (CdTe). Quantum
Quantum_dot_solar_cell
DC-to-DC power converter with an output voltage greater than its input voltage
can come from any suitable DC source, such as batteries, solar panels, rectifiers, and DC generators. A process that changes one DC voltage to a different
Boost_converter
Vacuum tube used for amplifying radio waves
electromagnetic interference from lightning, high voltage AC power transmission, AC rectifiers, and ballasts used in fluorescent lighting, greatly affected low-band
Inductive_output_tube
Electronic television camera tube
varistor (MOV) Organic semiconductor Photodetector Silicon controlled rectifier (SCR) Silicon-controlled switch (SCS) Solaristor Static induction thyristor
Iconoscope
Transistor using different semiconductor materials
Materials used for the substrate include silicon, gallium arsenide, and indium phosphide, while silicon / silicon-germanium alloys, aluminum gallium arsenide
Heterojunction bipolar transistor
Heterojunction_bipolar_transistor
Diode that works using quantum tunneling
diodes are called back diodes (or backward diodes) and can act as fast rectifiers with zero offset voltage and extreme linearity for power signals (they
Tunnel_diode
Device for producing coherent EM waves in the sub-visible spectrum
(H2O), hydroxyl radicals (•OH), methanol (CH3OH), formaldehyde (HCHO), silicon monoxide (SiO), and carbodiimide (HNCNH). Water molecules in star-forming
Maser
Type of solid state switch
S.; Gray, P. V.; Love, R. P.; Zommer, N. (1982). "The insulated gate rectifier (IGR): A new power switching device". 1982 International Electron Devices
Insulated-gate bipolar transistor
Insulated-gate_bipolar_transistor
Theoretical transistor
transistor can operate at a faster speed than a silicon solid-state transistor. The band-gap of silicon is 1.11eV, and the thermal energy of electrons
Nanoscale vacuum-channel transistor
Nanoscale_vacuum-channel_transistor
characteristic, the backward diode can be used as a detector up to 40 GHz. Rectifier A backward diode can be used for rectifying weak signals with peak amplitudes
Backward_diode
Passive electronic component providing electrical resistance
which the sputtering is performed can be controlled, the thickness of the thin film can be accurately controlled. The type of material also varies, consisting
Resistor
Electronic module
based on either thyristors, triodes for alternating current, silicon-controlled rectifiers or insulated-gate bipolar transistors, which converts a fixed
Voltage_controller
Electrical component that can break an electrical circuit
many different configurations; they may have multiple sets of contacts controlled by the same knob or actuator, and the contacts may operate simultaneously
Switch
Type of electrical current converter
to provide continuous current, in much the same way a capacitor in a rectifier filter provides continuous voltage. If this inductor is too small or below
Ćuk_converter
American multinational technology company
2013 RefuSol (Metzingen, Germany) acquired 2014 Power control modules (silicon-controlled rectifier controllers) section of AEG Power Solutions, Warstein-Belecke
Advanced_Energy
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SILICON CONTROLLED-RECTIFIER
SILICON CONTROLLED-RECTIFIER
SILICON CONTROLLED-RECTIFIER
SILICON CONTROLLED-RECTIFIER
SILICON CONTROLLED-RECTIFIER
SILICON CONTROLLED-RECTIFIER
SILICON CONTROLLED-RECTIFIER
SILICON CONTROLLED-RECTIFIER
SILICON CONTROLLED-RECTIFIER
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