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Device measuring ionizing radiation
In ionizing radiation detection physics, a semiconductor detector is a device that uses a semiconductor (usually silicon or germanium) to measure the effect
Semiconductor_detector
Early radio receiver component
type of semiconductor diode, and one of the first semiconductor electronic devices. The most common type was the so-called cat's whisker detector, which
Crystal_detector
Material of moderate electrical conductivity
practical application of semiconductors in electronics was the 1904 development of the cat's-whisker detector, a primitive semiconductor diode used in early
Semiconductor
Device used to detect, track, and/or identify ionising particles
Many of the detectors invented and used so far are ionization detectors (of which gaseous ionization detectors and semiconductor detectors are most typical)
Particle_detector
Semiconductor light source
electronic component that uses a semiconductor to emit light when current flows through it. Electrons in the semiconductor recombine with electron holes
Light-emitting_diode
Quantitative study of the energy spectra of gamma-ray sources
gamma ray photons. In semiconductor detectors, an electric field is applied to the detector volume. An electron in the semiconductor is fixed in its valence
Gamma_spectroscopy
Two-terminal electronic component
radio receiver detectors. Until the 1950s, vacuum diodes were used more frequently in radios because the early point-contact semiconductor diodes were less
Diode
Sensors of light or other electromagnetic energy
material, altering its conductivity. Photoconductive detectors are typically made of semiconductors. Photoemission or photoelectric effect: Photons cause
Photodetector
Technology for constructing integrated circuits
Complementary metal–oxide–semiconductor (CMOS /ˈsiːmɒs/ SEE-moss) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process
CMOS
Type of field-effect transistor
In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor
MOSFET
Electronic component that exploits the electronic properties of semiconductor materials
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium,
Semiconductor_device
Four-layer solid-state current-controlling device
A silicon controlled rectifier or semiconductor controlled rectifier (SCR) is a four-layer solid-state current-controlling device. The name "silicon controlled
Silicon_controlled_rectifier
Instrument that can measure properties of X-rays
(Si(Li) or Ge(Li)) semiconductor detectors have been developed. X-ray photons are converted to electron-hole pairs in the semiconductor and are collected
X-ray_detector
Practical physics application
a semiconductor, a process called "electroluminescence". The wavelength of the light produced depends on the energy band gap of the semiconductors used
Light-emitting_diode_physics
Light dependent resistor
used in light-sensitive detector circuits and light-activated and dark-activated switching circuits acting as a semiconductor resistance. In the dark
Photoresistor
Hybrid pixel detectors are a type of ionizing radiation detector consisting of an array of diodes based on semiconductor technology and their associated
Hybrid_pixel_detector
Discrete device in an electronic system
klystron (obsolete) Carcinotron Optical detectors or emitters Phototube or photodiode – tube equivalent of semiconductor photodiode Photomultiplier tube – phototube
Electronic_component
Semiconductor diode
metal–semiconductor junction is formed between a metal and a semiconductor, creating a Schottky barrier (instead of a semiconductor–semiconductor junction
Schottky_diode
Simple radio receiver circuit for AM reception
capacitive. A semiconductor crystal detector that demodulates the radio signal to extract the audio signal (modulation). The crystal detector functions as
Crystal_radio
Form of digital logic family in integrated circuits
NMOS or nMOS logic (from N-type metal–oxide–semiconductor) uses n-type (-) MOSFETs (metal–oxide–semiconductor field-effect transistors) to implement logic
NMOS_logic
Measurement of radioactivity within the body
then it can be detected by means of either a scintillation detector or a semiconductor detector placed close to the body. Radioactive decay may give rise
Whole-body_counting
Optical diode invented by Jun-Ichi Nishizawa
diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region. The p-type and n-type regions
PIN_diode
Diode that allows current to flow in the reverse direction at a specific voltage
permanently damaged due to overheating at the small (localized) areas of the semiconductor junction where avalanche breakdown conduction is occurring. A Zener
Zener_diode
Converts light into current
A photodiode is a semiconductor diode sensitive to photon radiation, such as visible light, infrared or ultraviolet radiation, X-rays and gamma rays.
Photodiode
A transistor is a semiconductor device with at least three terminals for connection to an electric circuit. In the common case, the third terminal controls
History_of_the_transistor
Device to detect the presence or absence of gases
photoionization detectors, infrared point sensors, ultrasonic sensors, electrochemical gas sensors, and metal–oxide–semiconductor (MOS) sensors. More
Gas_detector
Central computer component that executes instructions
the ALU, registers, and other components. Modern CPUs devote a lot of semiconductor area to caches and instruction-level parallelism to increase performance
Central_processing_unit
First successful type of transistor, developed in 1947
carried out on December 16, 1947, consisted of a block of germanium, a semiconductor, with two very closely spaced gold contacts held against it by a spring
Point-contact_transistor
Intentional introduction of impurities into an intrinsic semiconductor
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating
Doping_(semiconductor)
Type of transistor
control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal–oxide–semiconductor FET (MOSFET). FETs have three terminals:
Field-effect_transistor
Semiconductor diode producing short impulses
multiplier Comb generator Sampling phase detector Minority carrier P-n junction Pulse generator Semiconductor diode Used much less frequently Boff, A.
Step_recovery_diode
Particle detector for Cherenkov radiation
Chereknov detectors are contrasted with other nuclear particle measurement techniques such as scintillation counters or semiconductor detectors. Cherenkov
Cherenkov_detector
Part of computer memory
memory cell architecture is MOS memory, which consists of metal–oxide–semiconductor (MOS) memory cells. Modern random-access memory (RAM) uses MOS field-effect
Memory_cell_(computing)
Diode that emits light from an organic compound
to create p- and n-regions by changing the conductivity of the host semiconductor. OLEDs do not employ a crystalline p-n structure. Doping of OLEDs is
OLED
Integrated circuit customized for a specific task
4000 series. ASIC chips are typically fabricated using metal–oxide–semiconductor (MOS) technology, as MOS integrated circuit chips. As feature sizes
Application-specific integrated circuit
Application-specific_integrated_circuit
Device that controls current between electrodes
used earlier technologies such as the spark gap transmitter and crystal detector for radio or mechanical and electromechanical computers, the invention
Vacuum_tube
Electrical safety device that provides overcurrent protection
depends on the load's characteristics. Semiconductor devices may use a fast or ultrafast fuse as semiconductor devices heat rapidly when excess current
Fuse_(electrical)
Phenomena in semiconductor detectors
effect refers to semiconductor detectors; when these are used in harsh radiation environments, defects begin to appear in the semiconductor crystal lattice
Lazarus_effect
Pictogram used to represent various electrical and electronic devices or functions
P-channel junction gate field-effect transistor (JFET) Metal–oxide–semiconductor field-effect transistor (MOSFET) Enhancement mode, N‑channel MOSFET
Electronic_symbol
Micro-electronic component
This unified design delivers lower power consumption and a reduced semiconductor die area compared to traditional multi-chip architectures, though at
System_on_a_chip
Electronic circuits that utilize digital signals
in the form of BTL memos before being published in 1957. At Shockley Semiconductor, Shockley had circulated the preprint of their article in December 1956
Digital_electronics
Type of resistor whose resistance varies with temperature
A thermistor is a semiconductor type of resistor in which the resistance is strongly dependent on temperature. The word thermistor is a portmanteau of
Thermistor
Type of MOSFET where the gate is electrically isolated
MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated
Floating-gate_MOSFET
Semiconductor laser
diode (LD, also injection laser diode or ILD or semiconductor laser or diode laser) is a semiconductor device similar to a light-emitting diode in which
Laser_diode
Type of field-effect transistor
basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative
High-electron-mobility transistor
High-electron-mobility_transistor
Gas-filled tube, electrical switch, rectifier
small amount of argon gas to increase its sensitivity as a radio signal detector, and the German LRS relay tube, which also contained argon gas. Gas rectifiers
Thyratron
Transistor that uses both electrons and holes as charge carriers
amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material
Bipolar_junction_transistor
Electronic component
Another example of voltage dependent capacitance occurs in semiconductor devices such as semiconductor diodes, where the voltage dependence stems not from a
Capacitor
Early type of semiconductor rectifier
A metal rectifier is an early type of semiconductor rectifier in which the semiconductor is copper oxide, germanium or selenium. They were used in power
Metal_rectifier
Family of digital circuits
p-channel metal–oxide–semiconductor, is a family of digital circuits based on p-channel, enhancement mode metal–oxide–semiconductor field-effect transistors
PMOS_logic
Particle detector made of semiconductor strips
nuclear electronics, a microstrip detector is a particle detector that consists of a large number of identical semiconductor strips laid out along one axis
Microstrip_detector
Type of field-effect transistor
(metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction
MESFET
Electrical device that converts AC to DC
of the rectifier circuit. The crystal detector, the earliest type of semiconductor diode, was used as a detector in some of the earliest radio receivers
Rectifier
In semiconductor devices, a backward diode (also called back diode) is a variation on a Zener diode or tunnel diode having a better conduction for small
Backward_diode
Solid-state electrically operated switch also used as an amplifier
A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics
Transistor
Topics referred to by the same term
Ionization chambers Gaseous ionization detectors Geiger counters Photodetectors Scintillation counters Semiconductor detectors This disambiguation page lists
Radiation_detection
Metal alloy
telluride. A direct bandgap semiconductor, it is used in a variety of applications, including semiconductor radiation detectors, photorefractive gratings
Cadmium_zinc_telluride
Type of solid state switch
insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine
Insulated-gate bipolar transistor
Insulated-gate_bipolar_transistor
Electronic numeric display device
available to drive Nixies. LEDs are better suited to the low voltages that semiconductor integrated circuits typically use, which was an advantage for devices
Nixie_tube
DC linear voltage regulator
National Semiconductor. Because of this, National Semiconductor claims the title of "LDO inventor". Dobkin later left National Semiconductor in 1981 and
Low-dropout_regulator
Array of logic gates that are reprogrammable
a few Xilinx, Altera and Lattice products.[citation needed] Lattice Semiconductor manufactures low-power SRAM-based FPGAs featuring integrated configuration
Field-programmable_gate_array
Electronic component
Considerations "Failure Modes and Fusing of TVS Devices" (PDF). Vishay General Semiconductor. 13 August 2007. Retrieved 8 June 2012. Zener Theory and Design Considerations;
Transient-voltage-suppression diode
Transient-voltage-suppression_diode
of microstructured semiconductor neutron detectors (MSND). These detectors have microscopic structures etched into a semiconductor substrate, subsequently
Neutron_detection
Devices that measure magnetic field strength using the Hall effect
effect is an established method for determining these parameters in semiconductor technology. Hall effect devices produce a very low signal level and
Hall_effect_sensor
Type of diode
electronics, an avalanche diode is a diode (made from silicon or other semiconductor) that is designed to experience avalanche breakdown at a specified reverse
Avalanche_diode
Type of DC-to-DC converter
cost non-inverting buck–boost converter for battery chargers" Motorola Semiconductor. "Application note AN954: A Unique Converter Configuration provides
Buck–boost_converter
Proportional counter that detects charged particles and photons
Métiers in Paris Bubble chamber Gaseous ionization detector Micropattern gaseous detector Particle detector Wilson chamber F. Sauli (1977), - Principles of
Wire_chamber
Type of vacuum tube; early radio detector
vacuum tube invented in 1904 by English physicist John Ambrose Fleming as a detector for early radio receivers used in electromagnetic wireless telegraphy.
Fleming_valve
Detector that reacts to infrared (IR) radiation
materials in these are semiconductors with narrow band gaps. Incident IR photons can cause electronic excitations. In photoconductive detectors, the resistivity
Infrared_detector
DC-to-DC power converter with an output voltage greater than its input voltage
class of switched-mode power supply (SMPS) containing at least two semiconductors, a diode and a transistor, and at least one energy storage element:
Boost_converter
Microchip manipulating light instead of electricity
silicon on insulator, various polymers, and semiconductor materials which are used to make semiconductor lasers such as GaAs and InP. The different material
Photonic_integrated_circuit
Transistor using different semiconductor materials
is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and base regions, creating a heterojunction
Heterojunction bipolar transistor
Heterojunction_bipolar_transistor
Electrical device
Quantum cascade detector (QCD) Resonant-cavity-enhanced photo detector (RCE) Golay cell Hybrid pixel detector Semiconductor detector Voltage regulators
Single-ended primary-inductor converter
Single-ended_primary-inductor_converter
Electronic component
operate on mechanical changes instead of charge carrier effects in semiconductors. These devices were first discovered and described by Gerald Pearson
Resettable_fuse
Connector used to connect to mains power
Quantum cascade detector (QCD) Resonant-cavity-enhanced photo detector (RCE) Golay cell Hybrid pixel detector Semiconductor detector Voltage regulators
AC_power_plugs_and_sockets
Type of magnetometer
application exists for use in anti-submarine warfare as a magnetic anomaly detector (MAD) fitted to maritime patrol aircraft. SQUIDs are used in superparamagnetic
SQUID
Greatest energy a photon scattered on an electron can transfer to it
scatters within a scintillator or a semiconductor detector and the scattered photon escapes from the detector's volume, only a fraction of the incident
Compton_edge
Type of transistor
junction transistor is a transistor formed by diffusing dopants into a semiconductor substrate. The diffusion process was developed later than the alloy-junction
Diffused_junction_transistor
Instrument used for measuring ionizing radiation
chamber, the simplest ionising radiation detector Gaseous ionization detector, an overview of the main gaseous detector types Geiger–Müller tube, provides a
Geiger_counter
Type of semiconductor
Organic semiconductors are solids whose building blocks are pi-bonded molecules or polymers made up by carbon and hydrogen atoms and—at times—heteroatoms
Organic_semiconductor
Solid-state photodetector
its material properties, in particular the energy bandgap within the semiconductor. Many materials including silicon, germanium, germanium on silicon and
Single-photon_avalanche_diode
Field-effect transistor device
from the conventional bulk metal-oxide-semiconductor field-effect transistor (MOSFET), where the semiconductor material typically is the substrate, such
Thin-film_transistor
Photodetector sensitive to infrared radiation
A quantum cascade detector (QCD) is a photodetector sensitive to infrared radiation. The absorption of incident light is mediated by intersubband transitions
Quantum_cascade_detector
Type of display device
quantum dot display is a display device that uses quantum dots (QDs), semiconductor nanocrystals which can produce pure monochromatic red, green, and blue
Quantum_dot_display
Type of non-planar transistor
field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed
Fin_field-effect_transistor
Visual indicator of the amplitude of an electronic signal
(AGC) line in an AM superheterodyne receiver, or the limiter stage or FM detector in an FM receiver. As a station is tuned in the triode-grid becomes more
Magic_eye_tube
Form of diode
transferred electron device (TED), is a form of diode, a two-terminal semiconductor electronic component, with negative differential resistance, used in
Gunn_diode
Highly sensitive semiconductor electronic device
(APD) is a highly sensitive type of photodiode, which in general are semiconductor diodes that convert light into electricity via the photovoltaic effect
Avalanche_photodiode
Nonlinear two-terminal fundamental circuit element
power characteristic differs fundamentally from that of a metal oxide semiconductor transistor, which is capacitor-based. Unlike the transistor, the final
Memristor
MOSFET that can handle significant power levels
metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices
Power_MOSFET
Type of resistor, usually with three terminals
vibration or environmental contamination, to the same extent as other semiconductor devices, and can be secured electronically against unauthorised tampering
Potentiometer
Vacuum tube used to display images
Quantum cascade detector (QCD) Resonant-cavity-enhanced photo detector (RCE) Golay cell Hybrid pixel detector Semiconductor detector Voltage regulators
Cathode_ray_tube
Type of solid-state switch
language θύρα, meaning "door" or "valve", and transistor) is a solid-state semiconductor device which can be thought of as being a highly robust and switchable
Thyristor
DC-DC voltage step-down power converter
usually 5, 3.3 or 1.8 V. Buck converters typically contain at least two semiconductors (a diode and a transistor, although modern buck converters frequently
Buck_converter
Instrument for measuring ionizing radiation
some of the elements of which they are composed. However, detectors based on semiconductors, notably hyperpure germanium, have better intrinsic energy
Scintillation_counter
Type of semiconductor laser diode
type of semiconductor laser diode with laser beam emission perpendicular from the top surface, contrary to conventional edge-emitting semiconductor lasers
Vertical-cavity surface-emitting laser
Vertical-cavity_surface-emitting_laser
Device used in television cameras
pass through a scanning aperture to an anode, which serves as an electron detector. Among the first to design such a device were German inventors Max Dieckmann
Video_camera_tube
Temperature control system
instead rely on thermistors or other semiconductor devices such as a resistance thermometer (resistance temperature detector). Typically one or more regular
Thermostat
Device for generating microwaves
marine radar have successfully replaced the magnetron with microwave semiconductor oscillators, which have a narrower output frequency range. These allow
Cavity_magnetron
Emission of secondary X-rays from a material excited by high-energy X-rays
four common types of detector: gas flow proportional counters sealed gas detectors scintillation counters semiconductor detectors Gas flow proportional
X-ray_fluorescence
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