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Energy range in a solid where no electron states exist
a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure
Band_gap
American R&B and funk band (1967–2010)
The Gap Band was an American R&B and funk band that rose to fame during the 1970s and 1980s. The band consisted of three brothers: Charlie, Ronnie, and
The_Gap_Band
1982 studio album by the Gap Band
Gap Band IV is the sixth studio album by the Gap Band, released in 1982 on Total Experience Records. The album reached No. 1 on the Black Albums chart
Gap_Band_IV
Describes the range of energies of an electron within the solid
energy that they may not have (called band gaps or forbidden bands). Band theory derives these bands and band gaps by examining the allowed quantum mechanical
Electronic_band_structure
1984 studio album by The Gap Band
Gap Band VI is the eighth album (contrary to the title) by the Gap Band, released in 1984 on Total Experience Records. It was originally intended to be
Gap_Band_VI
Types of energy range in a solid where no electron states can exist
the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and
Direct_and_indirect_band_gaps
Controlling or altering the band gap of a material
Band-gap engineering is the process of controlling or altering the band gap of a material. This is typically done to semiconductors by controlling the
Band-gap_engineering
The Gap Band has released over 30 albums. Since their inception in 1967, the Gap Band has released 14 studio albums, 12 compilation albums and 2 live
The_Gap_Band_discography
1995 compilation album by The Gap Band
The Gap Band is the 16th album released in 1995 on Mercury. The album includes the most popular hits of the band. Greenberg, Adam. "The Gap Band - The
The_Best_of_Gap_Band
Electron energy bands which determine the electrical conductivity of a material
conduction bands. In semiconductors and insulators the two bands are separated by a band gap, while in conductors the bands overlap. A band gap is an energy
Valence_and_conduction_bands
Semiconductor materials with a larger band gap
semiconductors or WBGSs) are semiconductor materials which have a larger band gap than conventional semiconductors. Whereas conventional semiconductors like
Wide-bandgap_semiconductor
1979 studio album by the Gap Band
The Gap Band II is the fourth studio album by the Gap Band, released in 1979 on Mercury Records. It is their second major label release, and produced by
The_Gap_Band_II
1980 studio album by the Gap Band
The Gap Band III is the fifth studio album (contrary to the title) by American R&B band the Gap Band, released in 1980 on Mercury Records. It was produced
The_Gap_Band_III
Periodic optical nanostructure that affects the motion of photons
opening up the complete photonic band gap. The first one is to increase the refractive index contrast for the band gap in each direction becomes wider
Photonic_crystal
1983 studio album by the Gap Band
Gap Band V: Jammin' is the seventh studio album by the Gap Band, released in 1983 on Total Experience Records. The album was reissued on CD in 1997 by
Gap_Band_V:_Jammin'
Two-dimensional allotrope of silicon
With a tunable band gap, specific electronic components could be made-to-order for applications that require specific band gaps. The band gap can be brought
Silicene
Material of moderate electrical conductivity
band gap, inducing partially filled states in both the band of states beneath the band gap (valence band) and the band of states above the band gap (conduction
Semiconductor
Metal with a small negative indirect band-gap
semiconductors the filled valence band is separated from an empty conduction band by a band gap. For insulators, the magnitude of the band gap is larger (e.g., > 4 eV)
Semimetal
Rule in materials science
write a linear relationship between the band gap and composition. Using InPxAs(1-x) as before, the band gap energy, E g {\displaystyle E_{g}} , can be
Vegard's_law
1986 studio album by The Gap Band
Gap Band 8 is the 10th album (contrary to the title) by American R&B and funk band the Gap Band, released in 1986 on Total Experience Records. It is the
Gap_Band_8
Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping
List of semiconductor materials
List_of_semiconductor_materials
1979 studio album by the Gap Band
The Gap Band is the major label debut album by the Gap Band, released in 1979 on Mercury Records. It is the group's second self-titled album, and their
The_Gap_Band_(1979_album)
Tabular arrangement of the chemical elements
conditions: electrons can cross the gap when thermally excited. (Boron is also a semiconductor at ambient conditions.) The band gap disappears in tin, so that
Periodic_table
1977 studio album by the Gap Band
The Gap Band is the second album by the Gap Band in 1977 on Tattoo/RCA Records. This is not to be confused with the 1979 Mercury Records self-titled album
The_Gap_Band_(1977_album)
Thin semiconductors
semimetal graphene: TMD monolayers MoS2, WS2, MoSe2, WSe2, MoTe2 have a direct band gap, and can be used in electronics as transistors and in optics as emitters
Transition metal dichalcogenide monolayers
Transition_metal_dichalcogenide_monolayers
Practical physics application
"electroluminescence". The wavelength of the light produced depends on the energy band gap of the semiconductors used. Since these materials have a high index of
Light-emitting_diode_physics
Chemical compound
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices
Gallium_arsenide
Interface between two layers or regions of dissimilar semiconductors
materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device
Heterojunction
1985 studio album by The Gap Band
Gap Band VII is the ninth album by the Gap Band, released in 1985 on Total Experience Records. The album includes the single from original Jerry Peters's
Gap_Band_VII
Reference voltage independent of temperature
constant voltage corresponding to the particular semiconductor's theoretical band gap, with very little fluctuations from variations of power supply, electrical
Bandgap_voltage_reference
Crystalline structure of phosphorus
phosphorene is a competitor to graphene because it has a nonzero fundamental band gap that can be modulated by strain and the number of layers in a stack. Phosphorene
Phosphorene
Model in Quantum Physics
energy of such a state can lie either at the band edge or within the band gap. If the energy is within the band gap, the state is a surface state localized
Particle in a one-dimensional lattice
Particle_in_a_one-dimensional_lattice
Chemical element with metallic and nonmetallic properties
semiconductor with a band gap of around 0.3 eV or 0.4 eV. It can also be prepared in a semiconducting amorphous form, with a band gap of around 1.2–1.4 eV
Metalloid
Maximum theoretical efficiency of a solar cell
W/m2). The most popular solar cell material, silicon, has a less favorable band gap of 1.1 eV, resulting in a maximum efficiency of about 32%. Modern commercial
Shockley–Queisser_limit
Intentional introduction of impurities into an intrinsic semiconductor
conduction band while electron acceptor impurities create states near the valence band. The gap between these energy states and the nearest energy band is usually
Doping_(semiconductor)
Solid forms of the element phosphorus
9.210, b = 9.128, c = 21.893 Å, β = 97.776°, CSD-1935087). The optical band gap of the violet phosphorus was measured by diffuse reflectance spectroscopy
Allotropes_of_phosphorus
Chemical semiconductor compound
is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronics
Gallium_nitride
Forbidden energy state in solid state physics
In solid-state physics, an energy gap or band gap is an energy range in a solid where no electron states exist, i.e. an energy range where the density
Energy_gap
Strongly correlated system with a narrow band gap at low temperatures
electrons, that open up a narrow band gap (in the order of 10 meV) at low temperatures with the chemical potential lying in the gap, whereas in heavy fermion
Kondo_insulator
Maximum possible efficiency of electrical power from sunlight
absorbed. For photons with an energy above the band gap energy, only a fraction of the energy above the band gap can be converted to useful output. When a
Thermodynamic efficiency limit
Thermodynamic_efficiency_limit
Concept in quantum mechanics
heterostructure made up of alternating thin layers of semiconductors with different band-gaps should exhibit interesting and useful properties. Since then, much effort
Quantum_well
Flow of electric charge
valence band to the conduction band depends on the band gap between the bands. The size of this energy band gap serves as an arbitrary dividing line (roughly
Electric_current
Ratio of energy extracted from sunlight in solar cells
absorbed. For photons with an energy above the band gap energy, only a fraction of the energy above the band gap can be converted to useful output. When a
Solar-cell_efficiency
How the term nonmetal is used in many disciplines
In early work this band structure interpretation was based upon a single-electron approach with the Fermi level in the band gap as illustrated in the
Nonmetallic_material
Calcium titanium oxide mineral
other. Generally, as the dimensions of a crystal are reduced, a material's band gap and carrier confinement increase, while carrier transport worsens. Both
Perovskite
Physical phenomenon of electronic band structures
state with a narrow energy band, located somewhere within the band gap of the bulk material. For simplicity, the surface state band is assumed to be half-filled
Band_bending
Hexagonal lattice made of carbon atoms
to graphene's universal optical absorption and zero band gap. This property has enabled full-band mode-locking in fiber lasers using graphene-based saturable
Graphene
Electrical insulators that are conventionally expected to be conductors
Hubbard model. The band gap in a Mott insulator exists between bands of like character, such as 3d electron bands, whereas the band gap in charge-transfer
Mott_insulator
Phase of hydrogen
000,000 psi), the electronic energy band gap, a measure of electrical resistance, fell to almost zero. The band gap of hydrogen in its uncompressed state
Metallic_hydrogen
1982 single by The Gap Band
"Early in the Morning" is a song originally performed by American band the Gap Band, and written by member Charlie Wilson and producers Lonnie Simmons
Early in the Morning (Gap Band song)
Early_in_the_Morning_(Gap_Band_song)
Phenomenon observed in semiconductors
band gap of a semiconductor is increased as the absorption edge is pushed to higher energies as a result of some states close to the conduction band being
Moss–Burstein_effect
Acceleration of a photoreaction in the presence of a catalyst
the material's band gap, an electron excites from the valence band to the conduction band, generating an electron hole in the valence band. This electron-hole
Photocatalysis
Chemical element with atomic number 118 (Og)
semiconductor, with a band gap of 1.5±0.6 eV predicted. All the lighter noble gases are insulators instead: for example, the band gap of bulk radon is expected
Oganesson
Potential energy barrier in metal–semiconductor junctions
within its band gap. The nature of these metal-induced gap states and their occupation by electrons tends to pin the center of the band gap to the Fermi
Schottky_barrier
White powder insoluble in water
it has a relatively wide direct band gap of ~3.3 eV at room temperature. Advantages associated with a wide band gap include higher breakdown voltages
Zinc_oxide
Topics referred to by the same term
Look up gap in Wiktionary, the free dictionary. Gap or The Gap may refer to various openings, vacant spaces, lacks or pauses: Gap (landform), a low point
Gap
Computational quantum mechanical modelling method to investigate electronic structure
interactions and some strongly correlated systems; and in calculations of the band gap and ferromagnetism in semiconductors. The incomplete treatment of dispersion
Density_functional_theory
Electro reflectance
corresponding to the band gaps at critical points of the Brillouin zone. The electroreflectance effect can be used to get a clearer picture of the band structure
Electroreflectance
Nano-scale semiconductor particles
green. The specific emission energy of a QD depends on its dimensions, band gap energy, effective excited electron mass, and effective excited hole mass
Quantum_dot
Hydrated amorphous form of silica
through large thicknesses of the opal. This is the basis of the optical band gap in a photonic crystal. In addition, microfractures may be filled with secondary
Opal
Chemical compound
MoS2 in the 2H-phase is known to be an indirect-band gap semiconductor, monolayer MoS2 has a direct band gap. The layer-dependent optoelectronic properties
Molybdenum_disulfide
Material designed to manipulate sound waves
phonon behavior in crystals through band-gap engineering. This band-gap behavior mirrors the electronic band gaps in solids, enabling analogies between
Acoustic_metamaterial
Chemical compound
withdrawing) character of its substituents, the band gap energy can be varied. This chemical control over the band gap directly influences the color of the molecule
Polyfluorene
Type of field-effect transistor
transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is
High-electron-mobility transistor
High-electron-mobility_transistor
Chemical element with atomic number 14 (Si)
small energy gap (band gap) between its highest occupied energy levels (the valence band) and the lowest unoccupied ones (the conduction band). The Fermi
Silicon
Device used to produce electricity from light
and less soluble form. Copper indium gallium selenide (CIGS) is a direct band gap material. It has the highest efficiency (~20%) among all commercially significant
Solar_cell
Distortion of the periodic lattice of a one-dimensional crystal
helps to explain the origin of band gaps in semiconductors). If the ions each contribute one electron, then the band will be half-filled, up to values
Peierls_transition
United States pop rock act
Gary Puckett & The Union Gap (initially credited as The Union Gap featuring Gary Puckett) was an American pop rock group active in the late 1960s. The
Gary_Puckett_&_The_Union_Gap
1984 studio album by Thompson Twins
Into the Gap is the fourth studio album by the British pop band Thompson Twins, released on 17 February 1984 by Arista Records. The album was recorded
Into_the_Gap
Category of chemical elements
contribute to the smaller band gap of the bulk material (calculated 0.19 eV; observed 0.3 eV) as opposed to the larger band gap of a single layer (calculated
Nonmetal
Charge carriers per volume; such as electrons, ions, "holes" or others
the difference in energy between the conduction band and the Fermi level, which is half the band gap, E g {\displaystyle E_{g}} : E g = 2 ( E c − E f
Charge_carrier_density
Type of semiconductor, spintronic material
described by three energy gaps, the spin-flip gap Δ2 in valence band (VB), band gap Δ1 and spin-flip gap Δ3 in conduction band (CB). Up to now, bipolar
Bipolar magnetic semiconductor
Bipolar_magnetic_semiconductor
Semiconductor device capable of handling large amounts of electricity
semiconductor devices is expected from the replacement of silicon by a wide band-gap semiconductor. At the moment, silicon carbide (SiC) is considered to be
Power_semiconductor_device
Modelling the appearance of paint coatings
band-gap) or F ( R ∞ ) E {\displaystyle {\sqrt {F(R_{\infty })E}}} (for an indirect band-gap) is plotted against photon energy E. Then the band-gap energy
Kubelka–Munk_theory
Measure of a substance's ability to resist or conduct electric current
band gap, about halfway between the conduction band minimum (the bottom of the first band of unfilled electron energy levels) and the valence band maximum
Electrical resistivity and conductivity
Electrical_resistivity_and_conductivity
1985 greatest hits album by The Gap Band
Gap Gold: The Best of The Gap Band is a greatest hits album by American group The Gap Band. It was released in March 1985 on Total Experience Records.
Gap Gold: The Best of The Gap Band
Gap_Gold:_The_Best_of_The_Gap_Band
Solar power cell with multiple band gaps from different materials
high band gap alloy. This alloy range provides for the ability to have band gaps in the range 1.92–1.87 eV. The lower GaAs junction has a band gap of 1
Multi-junction_solar_cell
Highest occupied and lowest unoccupied molecular (frontier) orbitals
compound's HOMO–LUMO gap, the less stable the compound. The HOMO level is to organic semiconductors roughly what the maximum valence band is to inorganic semiconductors
HOMO_and_LUMO
Alternative to silicon-based photovoltaics
ultimate efficiency factor, and v is the ratio of open circuit voltage Vop to band-gap voltage Vg, and m is the impedance matching factor, and Vc is the thermal
Perovskite_solar_cell
Schottky barrier solar cell
efficiency of solar cells by introducing an impurity energy level in the band gap. This impurity can absorb more lower energy photons, which improves the
Schottky_junction_solar_cell
Phenomenon in solid-state physics of semiconductors
forbidden band or band gap between two allowed bands called the valence band and the conduction band. The valence band, immediately below the forbidden band, is
Carrier generation and recombination
Carrier_generation_and_recombination
Pure semiconductor without any significant dopant species present
across the band gap into the conduction band and these electrons can support charge flowing. When the electron in pure silicon crosses the gap, it leaves
Intrinsic_semiconductor
in band gaps of the semiconductors and are distributed between two band discontinuities, the valence-band discontinuity, and the conduction-band discontinuity
Band_offset
Device for producing light from electricity
lamps, and LED lamps, which produce light by a flow of electrons across a band gap in a semiconductor. The energy efficiency of electric lighting has significantly
Electric_light
Electric light that produces light using LEDs
first LEDs emitted light in a very narrow band of wavelengths, of a color characteristic of the energy band gap of the semiconductor material used to make
LED_lamp
Rule for energy band diagrams
use the electron affinity and band gap values for each semiconductor to calculate the conduction band and valence band offsets. The electron affinity
Anderson's_rule
Crystalline materials consisting of a single layer of atoms
which has an indirect band gap of 1.2eV, the monolayer is a direct band gap semiconductor with a gap roughly 1.8eV. The direct band gap leads to great enhancement
Single-layer_materials
All semiconductors with bandgaps smaller than silicon
Narrow-gap semiconductors are semiconducting materials with a magnitude of bandgap that is smaller than 0.7 eV, which corresponds to an infrared absorption
Narrow-gap_semiconductor
American musician and producer
Samuel Holden Jaffe (born April 15, 1993), known as Del Water Gap, is an American musician and record producer from Sharon, Connecticut, now based in
Del_Water_Gap
Electrical circuit used to power a LED
fixtures may be installed. As an LED heats up, its voltage drop decreases (band gap decrease). This can encourage the current to increase. An active constant
LED_circuit
Simple model of topological insulator
be two bands in the dispersion relation (usually called optical and acoustic bands). If the bands do not touch, there is a band gap. If the gap lies at
Su–Schrieffer–Heeger_model
Change in optical absorption by a semiconductor when an electric field is applied
Franz–Keldysh effect is the result of wavefunctions "leaking" into the band gap. When an electric field is applied, the electron and hole wavefunctions
Franz–Keldysh_effect
State of matter with insulating bulk but conductive boundary
continuously transformed into a trivial one without untwisting the bands, which closes the band gap and creates a conducting state. Thus, due to the continuity
Topological_insulator
Inorganic compound
The cubic form of ZnS has a band gap of about 3.54 electron volts at 300 kelvins, but the hexagonal form has a band gap of about 3.91 electron volts
Zinc_sulfide
Sources of electricity or hydrogen via electrolysis
semi-conductive) to minimize resistive losses suitable band structure: large enough band gap to split water (1.23V) and appropriate positions relative
Photoelectrochemical_cell
Chemical compound
toxic inorganic compound with the chemical formula AlP, used as a wide band gap semiconductor and a fumigant. This colorless solid is generally sold as
Aluminium_phosphide
Alloy of lead, tin and tellurium
telluride or lead into tin telluride. It is a IV-VI narrow band gap semiconductor material. The band gap of Pb1−xSnxTe is tuned by varying the composition(x)
Lead_tin_telluride
structure or the wurtzite crystal structure. They generally exhibit large band gaps, making them popular for short wavelength applications in optoelectronics
II-VI_semiconductor_compound
Chemical compound
reliability and lifetime of products made with stabilized zirconia. The ZrO2 band gap is dependent on the phase (cubic, tetragonal, monoclinic, or amorphous)
Zirconium_dioxide
Refractory compound of boron and nitrogen with formula BN
impurities as the origin. The material was also characterized as a wide band gap semiconductor (~3.89 eV) with potential applications as an MRI contrast
Boron_nitride
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