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Variation of threshold voltage in polycrystalline silicon materials
Polysilicon depletion effect is the phenomenon in which unwanted variation of threshold voltage of the MOSFET devices using polysilicon as gate material
Polysilicon_depletion_effect
Insulating region in a semiconductor
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region, or space charge layer
Depletion_region
Type of field-effect transistor
phenomenon observed here is the so-called poly depletion, where a depletion layer is formed in the gate polysilicon layer next to the gate dielectric when the
MOSFET
High purity form of silicon
Polycrystalline silicon, or multicrystalline silicon, also called polysilicon, poly-Si, or mc-Si, is a high-purity, polycrystalline form of silicon, used
Polycrystalline_silicon
Type of MOSFET where the gate is electrically isolated
floating-gate MOSFET with tunneling injector fabricated using a standard double-polysilicon CMOS process," IEEE Electron Device Letters, vol. 12, 1991, pp. 111-113
Floating-gate_MOSFET
Quantum optics in silicon
Meade, R.; Ram, R. J.; Stojanović, V.; Popović, M. A. (2013). "Depletion-mode polysilicon optical modulators in a bulk complementary metal-oxide semiconductor
Silicon_photonics
Family of digital circuits
technologies of the day. A major improvement came with the introduction of polysilicon self-aligned gate technology in 1968. Tom Klein and Federico Faggin at
PMOS_logic
Technology for constructing integrated circuits
semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-κ dielectric
CMOS
Electronic circuit formed on a small, flat piece of semiconductor material
used to mark different areas of the substrate to be doped or to have polysilicon, insulators or metal (typically aluminium or copper) tracks deposited
Integrated_circuit
Electronic component that exploits the electronic properties of semiconductor materials
the MOSFET is named in part for its "metal" gate, in modern devices polysilicon is typically used instead. Two-terminal devices: DIAC Diode (rectifier
Semiconductor_device
Extremely sensitive solid-state photodetector
operates in Geiger mode and is coupled with the others by a metal or polysilicon quenching[clarification needed] resistor. Although the device works in
Silicon_photomultiplier
Diode that emits light from an organic compound
normal glass substrate. The drive circuit was formed by low-temperature polysilicon TFTs. Also, low-molecular organic EL materials were employed. The pixel
OLED
Manufacturing process used to create integrated circuits
depositing polysilicon, Trichlorosilane used to create high purity polysilicon which is used for silicon photovoltaics or for polysilicon for the Czochralski
Semiconductor device fabrication
Semiconductor_device_fabrication
Type of second-generation solar cell
silicon (c-Si) technology in recent years, and the falling cost of the polysilicon feedstock, that followed after a period of severe global shortage, pressure
Thin-film_solar_cell
(April 1979). "1 /spl mu/m MOSFET VLSI technology. V. A single-level polysilicon technology using electron-beam lithography". IEEE Journal of Solid-State
List of semiconductor scale examples
List_of_semiconductor_scale_examples
Integrated circuit customized for a specific task
more generalized, with different base dies customized by both metal and polysilicon layers. Some base dies also include random-access memory (RAM) elements
Application-specific integrated circuit
Application-specific_integrated_circuit
Power amplifier
With the ability to place high-voltage circuitry (in a ‘well’ formed by polysilicon rings), that can ‘float’ 600 V or 1200 V, on the same silicon away from
Gate_driver
Solar power cell with multiple band gaps from different materials
decrease this effect, a tunnel junction is used. It is simply a wide band gap, highly doped diode. The high doping reduces the length of the depletion region
Multi-junction_solar_cell
Digital imaging circuit
in a non-equilibrium state called deep depletion. Then, when electron–hole pairs are generated in the depletion region, they are separated by the electric
Charge-coupled_device
Semiconductor memory technology
that the charges are stored in a conducting material (typically a doped polysilicon layer) in FG memory, whereas CT memory stored charges in localized traps
Charge_trap_flash
Timing oscillator
of RF Micromechanical Disk Resonators in Nanocrystalline Diamond and Polysilicon Structural Materials," IEEE Int. Electron Devices Mtg., pp. 291–294,
Microelectromechanical system oscillator
Microelectromechanical_system_oscillator
MOSFET that can handle significant power levels
can be considered as constant. Coxm is the capacitance between the (polysilicon) gate and the (metal) source electrode, so it is also constant. Therefore
Power_MOSFET
Observation on the growth of integrated circuit capacity
enabling multilevel metallization; 1995 enabling STI compact isolation, polysilicon patterning and yield / defect reduction" "IBM100 – Copper Interconnects:
Moore's_law
Method to produce electricity from solar radiation
in 2013. Manufacturing silicon PV systems has several steps. First, polysilicon is processed from mined quartz until it is very pure (semi-conductor
Photovoltaics
Class of devices for nanoscale functionality
material, surface films, and lubricant. In comparison to undoped Si or polysilicon films, SiC films possess the lowest frictional output, resulting in increased
Nanoelectromechanical_systems
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