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HOMOJUNCTION

Homojunction

A homojunction is a semiconductor interface that occurs between layers of similar semiconductor material; these materials have equal band gaps but typically

Homojunction

Semiconductor

Material of moderate electrical conductivity

of electrons would cause a current to flow throughout the material. Homojunctions occur when two differently doped semiconducting materials are joined

Semiconductor

Heterojunction

Interface between two layers or regions of dissimilar semiconductors

These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in

Heterojunction

Electrical junction

region, also called junction region Junction voltage Heterojunction Homojunction Josephson junction Nodal analysis p–n junction isolation Butterfield

Electrical junction

Electrical_junction

Zhores Alferov

Russian applied physicist (1930–2019)

Heterojunction transistors enabled higher frequency use than their homojunction predecessors, and this capability plays a key role in modern mobile phone

Zhores Alferov

Zhores_Alferov

Laser diode

Semiconductor laser

at room temperature from a diode laser. The first diode lasers were homojunction diodes. That is, the material (and thus the bandgap) of the waveguide

Laser diode

Laser_diode

Unil Perera

Physicist

webinars on “Graduate Studies in US” for the Southeast Asian audiences. Homojunction Interfacial work function internal photoemission IR Detectors (HIWIP):

Unil Perera

Unil_Perera

Copper indium gallium selenide solar cell

Type of thin-film photovoltaic cell

a stoichiometry of Cu(In,Ga) 3Se 5. The ODC is n-type, forming a p-n homojunction in the film at the interface between the α phase and the ODC. The recombination

Copper indium gallium selenide solar cell

Copper_indium_gallium_selenide_solar_cell

Silicon–germanium

Chemical compound

transistors have higher forward gain and lower reverse gain than traditional homojunction bipolar transistors. This translates into better low-current and high-frequency

Silicon–germanium

ELED

Light-emitting diode type

heterojunction (extrinsic semiconductor layers used as interfaces between two homojunction materials), the guiding principle for optical power is total internal

ELED

Indium gallium nitride

Chemical compound

Zeng, S. W.; et al. (2009). "Substantial photo-response of InGaN p–i–n homojunction solar cells". Semicond. Sci. Technol. 24 (5) 055009. Bibcode:2009SeScT

Indium gallium nitride

Indium_gallium_nitride

Perovskite solar cell

Alternative to silicon-based photovoltaics

started the efficiency race for monolithic 2-terminal tandems using an homojunction c-Si bottom cell, demonstrating a 13.7% efficiency cell, largely limited

Perovskite solar cell